TY - JOUR A1 - Schade, A. A1 - Bader, A. A1 - Huber, T. A1 - Kuhn, S. A1 - Czyszanowski, T. A1 - Pfenning, A. A1 - Rygała, M. A1 - Smołka, T. A1 - Motyka, M. A1 - Sęk, G. A1 - Hartmann, F. A1 - Höfling, S. T1 - Monolithic high contrast grating on GaSb/AlAsSb based epitaxial structures for mid-infrared wavelength applications JF - Optics Express N2 - We demonstrate monolithic high contrast gratings (MHCG) based on GaSb/AlAs0.08Sb0.92 epitaxial structures with sub-wavelength gratings enabling high reflection of unpolarized mid-infrared radiation at the wavelength range from 2.5 to 5 µm. We study the reflectivity wavelength dependence of MHCGs with ridge widths ranging from 220 to 984 nm and fixed 2.6 µm grating period and demonstrate that peak reflectivity of above 0.7 can be shifted from 3.0 to 4.3 µm for ridge widths from 220 to 984 nm, respectively. Maximum reflectivity of up to 0.9 at 4 µm can be achieved. The experiments are in good agreement with numerical simulations, confirming high process flexibility in terms of peak reflectivity and wavelength selection. MHCGs have hitherto been regarded as mirrors enabling high reflection of selected light polarization. With this work, we show that thoughtfully designed MHCG yields high reflectivity for both orthogonal polarizations simultaneously. Our experiment demonstrates that MHCGs are promising candidates to replace conventional mirrors like distributed Bragg reflectors to realize resonator based optical and optoelectronic devices such as resonant cavity enhanced light emitting diodes and resonant cavity enhanced photodetectors in the mid-infrared spectral region, for which epitaxial growth of distributed Bragg reflectors is challenging. KW - monolithic grating KW - high contrast KW - mid-infrared wavelength applications KW - epitaxial structures KW - GaSb/AlAsSb Y1 - 2023 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-350346 VL - 31 IS - 10 ER - TY - JOUR A1 - Rudno-Rudziński, W. A1 - Syperek, M. A1 - Andrezejewski, J. A1 - Maryński, A. A1 - Misiewicz, J. A1 - Somers, A. A1 - Höfling, S. A1 - Reithmaier, J. P. A1 - Sęk, G. T1 - Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 μm emission JF - AIP Advances N2 - We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The experimental discoveries have been explained by band structure calculations in the framework of the eight-band k·p model showing that they are driven by delocalization of the lowest energy hole state. The hole delocalization process from the 0D QDash confinement is unfavorable for optical devices based on such tunnel injection structures. KW - physics KW - surface collisions KW - electronic coupling KW - transition radiation KW - time-resolved photoluminescence KW - photoluminescence excitation KW - modulation spectroscopy KW - quantum dots KW - quantum wells KW - delocalization Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-181787 VL - 7 IS - 1 ER - TY - JOUR A1 - Syperek, M. A1 - Andrzejewski, J. A1 - Rudno-Rudziński, W. A1 - Maryński, A. A1 - Sȩk, G. A1 - Misiewicz, J. A1 - Reithmaier, J. P. A1 - Somers, A. A1 - Höfling, S. T1 - The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems JF - Journal of Physics: Conference Series N2 - The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP. KW - quantum mechanical coupling KW - quantum well KW - semiconductor quantum dot Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-262876 SN - 1742-6588 SN - 1742-6596 VL - 906 IS - 1 ER - TY - JOUR A1 - Beierlein, J. A1 - Egorov, O. A. A1 - Harder, T. H. A1 - Gagel, P. A1 - Emmerling, M. A1 - Schneider, C. A1 - Höfling, S. A1 - Peschel, U. A1 - Klembt, S. T1 - Bloch Oscillations of Hybrid Light‐Matter Particles in a Waveguide Array JF - Advanced Optical Materials N2 - Bloch oscillations are a phenomenon well known from quantum mechanics where electrons in a lattice experience an oscillatory motion in the presence of an electric field gradient. Here, the authors report on Bloch oscillations of hybrid light−matter particles, called exciton‐polaritons (polaritons), being confined in an array of coupled microcavity waveguides. To this end, the waveguide widths and their mutual couplings are carefully designed such that a constant energy gradient is induced perpendicular to the direction of motion of the propagating polaritons. This technique allows us to directly observe and study Bloch oscillations in real‐ and momentum‐space. Furthermore, the experimental findings are supported by numerical simulations based on a modified Gross–Pitaevskii approach. This work provides an important transfer of basic concepts of quantum mechanics to integrated solid state devices, using quantum fluids of light. KW - Bloch oscillations KW - exciton‐polaritons KW - polariton condensation KW - waveguides Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-239814 VL - 9 IS - 13 ER - TY - JOUR A1 - Motyka, M. A1 - Dyksik, M. A1 - Ryczko, K. A1 - Weih, R. A1 - Dallner, M. A1 - Höfling, S. A1 - Kamp, M. A1 - Sęk, G. A1 - Misiewicz, J. T1 - Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing JF - Applied Physics Letters N2 - Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters. KW - modulation spectroscopy KW - semiconductors KW - Type-II quantum well KW - interband cascade laser KW - GaAsSb Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-189795 VL - 108 IS - 10 ER - TY - JOUR A1 - Dyksik, M. A1 - Motyka, M. A1 - Kurka, M. A1 - Ryczo, K. A1 - Dallner, M. A1 - Höfling, S. A1 - Kamp, M. A1 - Sęk, G. A1 - Misiwicz, J. T1 - Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates JF - Optical and Quantum Electronics N2 - Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer. KW - Interband cascade lasers KW - Quantum wells KW - MU-M KW - Fourier-transform spectroscopy KW - Mid-infrared photoluminescence KW - Type II quantum wells KW - Localized states Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-204672 VL - 48 IS - 401 ER - TY - JOUR A1 - Laiho, K. A1 - Pressl, B. A1 - Schlager, A. A1 - Suchomel, H. A1 - Kamp, M. A1 - Höfling, S. A1 - Schneider, C. A1 - Weihs, G. T1 - Uncovering dispersion properties in semiconductor waveguides to study photon-pair generation JF - Nanotechnology N2 - We investigate the dispersion properties of ridge Bragg-reflection waveguides to deduce their phasematching characteristics. These are crucial for exploiting them as sources of parametric down-conversion (PDC). In order to estimate the phasematching bandwidth we first determine the group refractive indices of the interacting modes via Fabry-Perot experiments in two distant wavelength regions. Second, by measuring the spectra of the emitted PDC photons, we gain access to their group index dispersion. Our results offer a simple approach for determining the PDC process parameters in the spectral domain, and provide important feedback for designing such sources, especially in the broadband case. KW - Parametric down-conversion KW - Entanglement KW - CHIP KW - PUMP KW - Bragg-reflection waveguide KW - Information KW - phasematching KW - group refractive index Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-187025 VL - 27 IS - 43 ER - TY - JOUR A1 - Estrecho, E. A1 - Gao, T. A1 - Brodbeck, S. A1 - Kamp, M. A1 - Schneider, C. A1 - Höfling, S. A1 - Truscott, A. G. A1 - Ostrovskaya, E. A. T1 - Visualising Berry phase and diabolical points in a quantum exciton-polariton billiard JF - Scientific Reports N2 - Diabolical points (spectral degeneracies) can naturally occur in spectra of two-dimensional quantum systems and classical wave resonators due to simple symmetries. Geometric Berry phase is associated with these spectral degeneracies. Here, we demonstrate a diabolical point and the corresponding Berry phase in the spectrum of hybrid light-matter quasiparticles—exciton-polaritons in semiconductor microcavities. It is well known that sufficiently strong optical pumping can drive exciton-polaritons to quantum degeneracy, whereby they form a macroscopically populated quantum coherent state similar to a Bose-Einstein condensate. By pumping a microcavity with a spatially structured light beam, we create a two-dimensional quantum billiard for the exciton-polariton condensate and demonstrate a diabolical point in the spectrum of the billiard eigenstates. The fully reconfigurable geometry of the potential walls controlled by the optical pump enables a striking experimental visualization of the Berry phase associated with the diabolical point. The Berry phase is observed and measured by direct imaging of the macroscopic exciton-polariton probability densities. KW - Berry phase KW - diabolical points KW - quantum billiard KW - exciton-polariton Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-167496 VL - 6 IS - 37653 ER - TY - JOUR A1 - Suchomel, H. A1 - Brodbeck, S. A1 - Liew, T. C. H. A1 - Amthor, M. A1 - Klaas, M. A1 - Klembt, S. A1 - Kamp, M. A1 - Höfling, S. A1 - Schneider, C. T1 - Prototype of a bistable polariton field-effect transistor switch JF - Scientific Reports N2 - Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior. KW - materials for optics KW - nanoscience and technology KW - optics and photonics KW - semiconductors Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-158323 VL - 7 IS - 5114 ER - TY - JOUR A1 - Hopfmann, C. A1 - Albert, F. A1 - Schneider, C. A1 - Höfling, S. A1 - Kamp, M. A1 - Forchel, A. A1 - Kanter, I. A1 - Reizenstein, S. T1 - Nonlinear emission characteristics of quantum dot-micropillar lasers in the presence of polarized optical feedback JF - New Journal of Physics N2 - We report on electrically pumped quantum dot-microlasers in the presence of polarized self-feedback. The high-\(\beta\) microlasers show two orthogonal, linearly polarized emission modes which are coupled via the common gain medium. This coupling is explained in terms of gain competition between the two lasing modes and leads to distinct differences in their input-output characteristics. By applying polarized self-feedback via an external mirror, we are able to control the laser characteristics of the emission modes in terms of the output power, the coherence time and the photon statistics. We find that linearly polarized self-feedback stabilizes the lasing of a given mode, while cross-polarized feedback between the two modes reduces strongly the intensity of the other emission mode showing particular high-intensity fluctuations and even super-thermal values of the photon autocorrelation function \(g^{(2)} (\tau)\) at zero delay. Measurements of \(g^{(2)} (\tau)\) under external feedback also allow us to detect revival peaks associated with the round trip time of the external cavity. Analyzing the damping and shape of the \(g^{(2)} (\tau)\) revival peaks by a phenomenological model provides us insight into the underlying physics such as the effective exciton lifetime and gain characteristics of the quantum dots in the active region of these microlasers. KW - semiconductor lasers KW - coherence KW - system KW - gain Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-123127 SN - 1367-2630 VL - 15 IS - 025030 ER -