TY  - JOUR
A1  - Fuchs, F.
A1  - Stender, B.
A1  - Trupke, M.
A1  - Simin, D.
A1  - Pflaum, J.
A1  - Dyakonov, V.
A1  - Astakhov, G.V.
T1  - Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
JF  - Nature Communications
N2  - Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
KW  - nuclear magnetic resonance
KW  - coherent control
KW  - 4H
KW  - phosphorus
KW  - qubits
KW  - defects
KW  - entanglement
KW  - room temperature
KW  - vacancy
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-148502
VL  - 6
IS  - 7578
ER  - 
TY  - JOUR
A1  - Astakhov, Georgy V.
A1  - Fuchs, F.
A1  - Soltamov, V. A.
A1  - Väth, S.
A1  - Baranov, P. G.
A1  - Mokhov, E. N.
A1  - Dyakonov, V.
T1  - Silicon carbide light-emitting diode as a prospective room temperature source for single photons
JF  - Scientific Reports
N2  - Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
KW  - semiconductors
KW  - inorganic LEDs
KW  - quantum optics
KW  - nanophotonics
KW  - plasmonics
Y1  - 2013
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-96308
ER  -