TY  - THES
A1  - Slobodskyy, Anatoliy
T1  - Diluted magnetic semiconductor Resonant Tunneling Structures for spin manipulation
T1  - Verdünnt magnetische Halbleiter Resonante Tunnel-Strukturen für Spin Manipulation
N2  - In this work we investigate magnetic resonant tunneling diode (RTD) structures for spin manipulation. All-II-VI semiconductor RTD structures based on [Zn,Be]Se are grown by molecular beam epitaxy. We observe a strong, magnetic field induced, splitting of the resonance peaks in the I-V characteristics of RTDs with [Zn,Mn]Se diluted magnetic semiconductors (DMS) quantum well. The splitting saturates at high fields and has strong temperature dependence. A phonon replica of the resonance is also observed and has similar behaviour to the peak. We develop a model based on the giant Zeeman splitting of the spin levels in the DMS quantum well in order to explain the magnetic field induced behaviour of the resonance.
N2  - In dieser Arbeit werden magnetische resonante Tunneldioden (RTD) hinsichtlich ihrer Eignung zur Spin-Manipulation untersucht. [Zn, Be]Se basierende II-VI RTD-Strukturen wurden mittels Molekularstrahlepitaxie gewachsen. Man beobachtet eine starke, vom Magnetfeld induzierte Aufspaltung der Resonanz in der U-I Kennlinie derjenigen RTDs, die über einen Quantentrog aus [Zn, Mn]Se verdünnt magnetischen Halbleiter (DMS) verfügen. Diese Aufspaltung hat eine starke Temperaturabhängigkeit und erreicht bei hohen Feldern eine Sättigung. Eine Phononen-Replika der Resonanz wird ebenfalls beobachtet und hat ähnliche Eigenschaften wie die Resonanz selbst. Es wird ein Modell entwickelt, welches auf der Giant-Zeeman-Aufspaltung der Spin-Aufgespalteten Niveaus des DMS-Quantentrogs basiert, um das magnetfeldabhängige Verhalten der Resonanz zu erklären.
KW  - Resonanz-Tunneldiode
KW  - Semimagnetischer Halbleiter
KW  - Magnetoelektronik
KW  - spintronik
KW  - spin Injektion
KW  - verdünnt magnetische Halbleiter
KW  - resonante Tunneldioden
KW  - spintronics
KW  - spin injection
KW  - diluted magnetic semiconductors
KW  - resonant tunneling diode
Y1  - 2005
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-18263
ER  - 
TY  - JOUR
A1  - Rothmayr, Florian
A1  - Guarin Castro, Edgar David
A1  - Hartmann, Fabian
A1  - Knebl, Georg
A1  - Schade, Anne
A1  - Höfling, Sven
A1  - Koeth, Johannes
A1  - Pfenning, Andreas
A1  - Worschech, Lukas
A1  - Lopez-Richard, Victor
T1  - Resonant tunneling diodes: mid-infrared sensing at room temperature
JF  - Nanomaterials
N2  - Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities.
KW  - resonant tunneling diode
KW  - mid-infrared sensing
KW  - photosensor
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-267152
SN  - 2079-4991
VL  - 12
IS  - 6
ER  - 
TY  - JOUR
A1  - Pfenning, Andreas
A1  - Krüger, Sebastian
A1  - Jabeen, Fauzia
A1  - Worschech, Lukas
A1  - Hartmann, Fabian
A1  - Höfling, Sven
T1  - Single-photon counting with semiconductor resonant tunneling devices
JF  - Nanomaterials
N2  - Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown.
KW  - single-photon detectors
KW  - resonant tunneling diode
KW  - photon counting
KW  - III–V semiconductor devices
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-281922
SN  - 2079-4991
VL  - 12
IS  - 14
ER  -