TY  - JOUR
A1  - Fuchs, F.
A1  - Stender, B.
A1  - Trupke, M.
A1  - Simin, D.
A1  - Pflaum, J.
A1  - Dyakonov, V.
A1  - Astakhov, G.V.
T1  - Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
JF  - Nature Communications
N2  - Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
KW  - nuclear magnetic resonance
KW  - coherent control
KW  - 4H
KW  - phosphorus
KW  - qubits
KW  - defects
KW  - entanglement
KW  - room temperature
KW  - vacancy
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-148502
VL  - 6
IS  - 7578
ER  -