TY  - JOUR
A1  - Gottscholl, Andreas
A1  - Diez, Matthias
A1  - Soltamov, Victor
A1  - Kasper, Christian
A1  - Krauße, Dominik
A1  - Sperlich, Andreas
A1  - Kianinia, Mehran
A1  - Bradac, Carlo
A1  - Aharonovich, Igor
A1  - Dyakonov, Vladimir
T1  - Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors
JF  - Nature Communications
N2  - Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V\(_B\)\(^−\)) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the V\(_B\)\(^−\). Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
KW  - electronic properties and materials
KW  - qubits
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-261581
VL  - 12
IS  - 1
ER  - 
TY  - JOUR
A1  - Fuchs, F.
A1  - Stender, B.
A1  - Trupke, M.
A1  - Simin, D.
A1  - Pflaum, J.
A1  - Dyakonov, V.
A1  - Astakhov, G.V.
T1  - Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
JF  - Nature Communications
N2  - Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
KW  - nuclear magnetic resonance
KW  - coherent control
KW  - 4H
KW  - phosphorus
KW  - qubits
KW  - defects
KW  - entanglement
KW  - room temperature
KW  - vacancy
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-148502
VL  - 6
IS  - 7578
ER  -