TY - JOUR A1 - Rau, Markus A1 - Heindel, Tobias A1 - Unsleber, Sebastian A1 - Braun, Tristan A1 - Fischer, Julian A1 - Frick, Stefan A1 - Nauerth, Sebastian A1 - Schneider, Christian A1 - Vest, Gwenaelle A1 - Reitzenstein, Stephan A1 - Kamp, Martin A1 - Forchel, Alfred A1 - Höfling, Sven A1 - Weinfurter, Harald T1 - Free space quantum key distribution over 500 meters using electrically driven quantum dot single-photon sources-a proof of principle experiment JF - New Journal of Physics N2 - Highly efficient single-photon sources (SPS) can increase the secure key rate of quantum key distribution (QKD) systems compared to conventional attenuated laser systems. Here we report on a free space QKD test using an electrically driven quantum dot single-photon source (QD SPS) that does not require a separate laser setup for optical pumping and thus allows for a simple and compact SPS QKD system. We describe its implementation in our 500 m free space QKD system in downtown Munich. Emulating a BB84 protocol operating at a repetition rate of 125 MHz, we could achieve sifted key rates of 5-17 kHz with error ratios of 6-9% and g((2))(0)-values of 0.39-0.76. KW - QKD KW - electrically driven KW - free space KW - quantum dots KW - quantum key distribution Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-116760 VL - 16 IS - 043003 ER - TY - JOUR A1 - Braun, T. A1 - Schneider, C. A1 - Maier, S. A1 - Igusa, R. A1 - Iwamoto, S. A1 - Forchel, A. A1 - Höfling, S. A1 - Arakawa, Y. A1 - Kamp, M. T1 - Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots JF - AIP Advances N2 - In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s). KW - GAAS Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-115448 SN - 2158-3226 VL - 4 IS - 9 ER -