TY - JOUR A1 - Bauer, Boris A1 - Goebeler, Matthias A1 - Weissbrich, Benedikt A1 - Kerstan, Andreas T1 - Kerinokeratosis papulosa of childhood JF - Dermatology N2 - Background: Kerinokeratosis papulosa (KP) is considered an extremely rare genodermatosis presenting usually as waxy papules on the trunk in childhood. Objective: To describe and analyze the clinical, histological and potential etiopathological aspects of KP. Methods: The dermatoscopic features of a new case of KP of childhood are investigated. The presence of human papillomavirus (HPV) DNA in lesional skin was studied by polymerase chain reaction. Furthermore, all cases of KP of childhood reported so far were reviewed. Results: As a diagnostic tool, we describe for the first time a dermatoscopic feature, namely a cribriform pattern of KP, in an 11-year-old boy. In addition, we detected HPV (type 57) in his KP lesions. Conclusions: Dermatoscopic examination might be a useful tool to distinguish KP from other skin lesions, e.g. common warts. The detection of HPV type 57 might hint to an etiological role of HPV for KP. KW - Waxy papulosis of childhood KW - Human papillomavirus KW - EVER1 KW - EVER2 KW - Kerinokeratosis papulosa Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-198997 SN - 1018-8665 SN - 1421-9832 N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 231 IS - 1 SP - 1 EP - 4 ER - TY - JOUR A1 - Schneider, Eberhard A1 - El Hajj, Nady A1 - Müller, Fabian A1 - Navarro, Bianca A1 - Haaf, Thomas T1 - Epigenetic Dysregulation in the Prefrontal Cortex of Suicide Completers JF - Cytogenetic and Genome Research N2 - The epigenome is thought to mediate between genes and the environment, particularly in response to adverse life experiences. Similar to other psychiatric diseases, the suicide liability of an individual appears to be influenced by many genetic factors of small effect size as well as by environmental stressors. To identify epigenetic marks associated with suicide, which is considered the endpoint of complex gene-environment interactions, we compared the cortex DNA methylation patterns of 6 suicide completers versus 6 non-psychiatric sudden-death controls, using Illumina 450K methylation arrays. Consistent with a multifactorial disease model, we found DNA methylation changes in a large number of genes, but no changes with large effects reaching genome-wide significance. Global methylation of all analyzed CpG sites was significantly (0.25 percentage point) lower in suicide than in control brains, whereas the vast majority (97%) of the top 1,000 differentially methylated regions (DMRs) were higher methylated (0.6 percentage point) in suicide brains. Annotation analysis of the top 1,000 DMRs revealed an enrichment of differentially methylated promoters in functional categories associated with transcription and expression in the brain. In addition, we performed a comprehensive literature research to identify suicide genes that have been replicated in independent genetic association, brain methylation and/or expression studies. Although, in general, there was no significant overlap between different published data sets or between our top 1,000 DMRs and published data sets, our methylation screen strengthens a number of candidate genes (APLP2, BDNF, HTR1A, NUAK1, PHACTR3, MSMP, SLC6A4, SYN2, and SYNE2) and supports a role for epigenetics in the pathophysiology of suicide. KW - Cortex KW - DNA methylation KW - Suicidal behavior KW - Transcription regulation Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-199032 SN - 1424-8581 SN - 1424-859X VL - 146 IS - 1 ER - TY - JOUR A1 - Teichmann, Christoph T1 - Corporate Groups within the Legal Framework of the European Union: The Group-Related Aspects of the SUP Proposal and the EU Freedom of Establishment JF - European Company and Financial Law Review N2 - No abstract available. KW - EU KW - corporate groups Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-194513 SN - 1613-2556 SN - 1613-2548 N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 12 IS - 2 SP - 202 EP - 229 ER - TY - JOUR A1 - Kolominsky-Rabas, Peter L. A1 - Wiedmann, Silke A1 - Weingärtner, Michael A1 - Liman, Thomas G. A1 - Endres, Matthias A1 - Schwab, Stefan A1 - Buchfelder, Michael A1 - Heuschmann, Peter U. T1 - Time Trends in Incidence of Pathological and Etiological Stroke Subtypes during 16 Years: The Erlangen Stroke Project JF - Neuroepidemiology N2 - Background: Population-based data, which continuously monitors time trends in stroke epidemiology are limited. We investigated the incidence of pathological and etiological stroke subtypes over a 16 year time period. Methods: Data were collected within the Erlangen Stroke Project (ESPro), a prospective, population-based stroke register in Germany covering a total study population of 105,164 inhabitants (2010). Etiology of ischemic stroke was classified according to the Trial of Org 10172 in Acute Stroke Treatment (TOAST) criteria. Results: Between January 1995 and December 2010, 3,243 patients with first-ever stroke were documented. The median age was 75 and 55% were females. The total stroke incidence decreased over the 16 year study period in men (Incidence Rate Ratio 1995-1996 vs. 2009-2010 (IRR) 0.78; 95% CI 0.58-0.90) but not in women. Among stroke subtypes, a decrease in ischemic stroke incidence (IRR 0.73; 95% CI 0.57-0.93) and of large artery atherosclerotic stroke (IRR 0.27; 95% CI 0.12-0.59) was found in men and an increase of stroke due to small artery occlusion in women (IRR 2.33; 95% CI 1.39-3.90). Conclusions: Variations in time trends of pathological and etiological stroke subtypes were found between men and women that might be linked to gender differences in the development of major vascular risk factors in the study population. KW - stroke KW - epidemiology KW - incidence KW - time trends KW - register Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-196503 SN - 0251-5350 SN - 1423-0208 N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 44 IS - 1 ER - TY - JOUR A1 - Poot, Martin A1 - Haaf, Thomas T1 - Mechanisms of Origin, Phenotypic Effects and Diagnostic Implications of Complex Chromosome Rearrangements JF - Molecular Syndromology N2 - Complex chromosome rearrangements (CCRs) are currently defined as structural genome variations that involve more than 2 chromosome breaks and result in exchanges of chromosomal segments. They are thought to be extremely rare, but their detection rate is rising because of improvements in molecular cytogenetic technology. Their population frequency is also underestimated, since many CCRs may not elicit a phenotypic effect. CCRs may be the result of fork stalling and template switching, microhomology-mediated break-induced repair, breakage-fusion-bridge cycles, or chromothripsis. Patients with chromosomal instability syndromes show elevated rates of CCRs due to impaired DNA double-strand break responses during meiosis. Therefore, the putative functions of the proteins encoded by ATM, BLM, WRN, ATR, MRE11, NBS1, and RAD51 in preventing CCRs are discussed. CCRs may exert a pathogenic effect by either (1) gene dosage-dependent mechanisms, e.g. haploinsufficiency, (2) mechanisms based on disruption of the genomic architecture, such that genes, parts of genes or regulatory elements are truncated, fused or relocated and thus their interactions disturbed - these mechanisms will predominantly affect gene expression - or (3) mixed mutation mechanisms in which a CCR on one chromosome is combined with a different type of mutation on the other chromosome. Such inferred mechanisms of pathogenicity need corroboration by mRNA sequencing. Also, future studies with in vitro models, such as inducible pluripotent stem cells from patients with CCRs, and transgenic model organisms should substantiate current inferences regarding putative pathogenic effects of CCRs. The ramifications of the growing body of information on CCRs for clinical and experimental genetics and future treatment modalities are briefly illustrated with 2 cases, one of which suggests KDM4C(JMJD2C) as a novel candidate gene for mental retardation. KW - triplosufficiency KW - complex chromosome rearrangements KW - DNA double-strand break KW - haploinsufficiency KW - mixed mutation mechanisms KW - structural genome variations Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-196524 SN - 1661-8769 SN - 1661-8777 N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 6 IS - 3 ER - TY - JOUR A1 - Schmid, Michael A1 - Steinlein, Claus T1 - Chromosome Banding in Amphibia. XXXII. The Genus Xenopus (Anura, Pipidae) JF - Cytogenetic and Genome Research N2 - Mitotic chromosomes of 16 species of the frog genus Xenopus were prepared from kidney and lung cell cultures. In the chromosomes of 7 species, high-resolution replication banding patterns could be induced by treating the cultures with 5-bromodeoxyuridine (BrdU) and deoxythymidine (dT) in succession, and in 6 of these species the BrdU/dT-banded chromosomes could be arranged into karyotypes. In the 3 species of the clade with 2n = 20 and 4n = 40 chromosomes (X. tropicalis, X. epitropicalis, X. new tetraploid 1), as well as in the 3 species with 4n = 36 chromosomes (X. laevis, X. borealis, X. muelleri), the BrdU/dT-banded karyotypes show a high degree of homoeology, though differences were detected between these groups. Translocations, inversions, insertions or sex-specific replication bands were not observed. Minor replication asynchronies found between chromosomes probably involve heterochromatic regions. BrdU/dT replication banding of Xenopus chromosomes provides the landmarks necessary for the exact physical mapping of genes and repetitive sequences. FISH with an X. laevis 5S rDNA probe detected multiple hybridization sites at or near the long-arm telomeric regions in most chromosomes of X. laevis and X. borealis, whereas in X. muelleri, the 5S rDNA sequences are located exclusively at the long-arm telomeres of a single chromosome pair. Staining with the AT base pair-specific fluorochrome quinacrine mustard revealed brightly fluorescing heterochromatic regions in the majority of X. borealis chromosomes which are absent in other Xenopus species. KW - X. laevis-type karyotype KW - X. tropicalis-type karyotype KW - BrdU/dT replication banding KW - chromosome staining KW - FISH KW - polyploidy KW - Xenopus Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-196727 SN - 1424-8581 SN - 1424-859X N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 145 IS - 3-4 ER - TY - JOUR A1 - Schmid, Michael A1 - Evans, Ben J. A1 - Bogart, James P. T1 - Polyploidy in Amphibia JF - Cytogenetic and Genome Research N2 - This review summarizes the current status of the known extant genuine polyploid anuran and urodelan species, as well as spontaneously originated and/or experimentally produced amphibian polyploids. The mechanisms by which polyploids can originate, the meiotic pairing configurations, the diploidization processes operating in polyploid genomes, the phenomenon of hybridogenesis, and the relationship between polyploidization and sex chromosome evolution are discussed. The polyploid systems in some important amphibian taxa are described in more detail. KW - allopolyploidy KW - Anura KW - autopolyploidy KW - diploidization KW - hybridogenesis KW - polyploidization KW - sex chromosome evolution KW - Urodela Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-196730 SN - 1424-8581 SN - 1424-859X N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 145 IS - 3-4 ER - TY - JOUR A1 - Matsuda, Yoichi A1 - Uno, Yoshinobu A1 - Kondo, Mariko A1 - Gilchrist, Michael J. A1 - Zorn, Aaron M. A1 - Rokhsar, Daniel S. A1 - Schmid, Michael A1 - Taira, Masanori T1 - A New Nomenclature of Xenopus laevis Chromosomes Based on the Phylogenetic Relationship to Silurana/Xenopus tropicalis JF - Cytogenetic and Genome Research N2 - Xenopus laevis (XLA) is an allotetraploid species which appears to have undergone whole-genome duplication after the interspecific hybridization of 2 diploid species closely related to Silurana/Xenopus tropicalis (XTR). Previous cDNA fluorescence in situ hybridization (FISH) experiments have identified 9 sets of homoeologous chromosomes in X. laevis, in which 8 sets correspond to chromosomes 1-8 of X. tropicalis (XTR1-XTR8), and the last set corresponds to a fusion of XTR9 and XTR10. In addition, recent X. laevis genome sequencing and BAC-FISH experiments support this physiological relationship and show no gross chromosome translocation in the X. laevis karyotype. Therefore, for the benefit of both comparative cytogenetics and genome research, we here propose a new chromosome nomenclature for X. laevis based on the phylogenetic relationship and chromosome length, i.e. XLA1L, XLA1S, XLA2L, XLA2S, and so on, in which the numbering of XLA chromosomes corresponds to that in X. tropicalis and the postfixes ‘L' and ‘S' stand for ‘long' and ‘short' chromosomes in the homoeologous pairs, which can be distinguished cytologically by their relative size. The last chromosome set is named XLA9L and XLA9S, in which XLA9 corresponds to both XTR9 and XTR10, and hence, to emphasize the phylogenetic relationship to X. tropicalis, XLA9_10L and XLA9_10S are also used as synonyms. KW - BrdU replication banding pattern KW - homoeologous chromosomes KW - nomenclature KW - Xenopus laevis KW - Xenopus tropicalis Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-196748 SN - 1424-8581 SN - 1424-859X N1 - This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. VL - 145 IS - 3-4 ER - TY - THES A1 - Ames, Christopher T1 - Molecular Beam Epitaxy of 2D and 3D HgTe, a Topological Insulator T1 - Molekularstrahlepitaxie von 2D und 3D HgTe, ein topologischer Isolator N2 - In the present thesis the MBE growth and sample characterization of HgTe structures is investigated and discussed. Due to the first experimental discovery of the quantum Spin Hall effect (QSHE) in HgTe quantum wells, this material system attains a huge interest in the spintronics society. Because of the long history of growing Hg-based heterostructures here at the Experimentelle Physik III in Würzburg, there are very good requirements to analyze this material system more precisely and in new directions. Since in former days only doped HgTe quantum wells were grown, this thesis deals with the MBE growth in the (001) direction of undoped HgTe quantum wells, surface located quantum wells and three dimensional bulk layers. All Hg-based layers were grown on CdTe substrates which generate strain in the layer stack and provide therefore new physical effects. In the same time, the (001) CdTe growth was investigated on n-doped (001) GaAs:Si because the Japanese supplier of CdTe substrates had a supply bottleneck due to the Tohoku earthquake and its aftermath in 2011. After a short introduction of the material system, the experimental techniques were demonstrated and explained explicitly. After that, the experimental part of this thesis is displayed. So, the investigation of the (001) CdTe growth on (001) GaAs:Si is discussed in chapter 4. Firstly, the surface preparation of GaAs:Si by oxide desorption is explored and analyzed. Here, rapid thermal desorption of the GaAs oxide with following cool down in Zn atmosphere provides the best results for the CdTe due to small holes at the surface, while e.g. an atomic flat GaAs buffer deteriorates the CdTe growth quality. The following ZnTe layer supplies the (001) growth direction of the CdTe and exhibits best end results of the CdTe for 30 seconds growth time at a flux ratio of Zn/Te ~ 1/1.2. Without this ZnTe layer, CdTe will grow in the (111) direction. However, the main investigation is here the optimization of the MBE growth of CdTe. The substrate temperature, Cd/Te flux ratio and the growth time has to be adjusted systematically. Therefore, a complex growth process is developed and established. This optimized CdTe growth process results in a RMS roughness of around 2.5 nm and a FWHM value of the HRXRD w-scan of 150 arcsec. Compared to the literature, there is no lower FWHM value traceable for this growth direction. Furthermore, etch pit density measurements show that the surface crystallinity is matchable with the commercial CdTe substrates (around 1x10^4 cm^(-2)). However, this whole process is not completely perfect and offers still room for improvements. The growth of undoped HgTe quantum wells was also a new direction in research in contrast to the previous n-doped grown HgTe quantum wells. Here in chapter 5, the goal of very low carrier densities was achieved and therefore it is now possible to do transport experiments in the n - and p - region by tuning the gate voltage. To achieve this high sample quality, very precise growth of symmetric HgTe QWs and their HRXRD characterization is examined. Here, the quantum well thickness can now determined accurate to under 0.3 nm. Furthermore, the transport analysis of different quantum well thicknesses shows that the carrier density and mobility increase with rising HgTe layer thickness. However, it is found out that the band gap of the HgTe QW closes indirectly at a thickness of 11.6 nm. This is caused by the tensile strained growth on CdTe substrates. Moreover, surface quantum wells are studied. These quantum wells exhibit no or a very thin HgCdTe cap. Though, oxidization and contamination of the surface reduces here the carrier mobility immensely and a HgCdTe layer of around 5 nm provides the pleasing results for transport experiments with superconductors connected to the topological insulator [119]. A completely new achievement is the realization of MBE growth of HgTe quantum wells on CdTe/GaAs:Si substrates. This is attended by the optimization of the CdTe growth on GaAs:Si. It exposes that HgTe quantum wells grown in-situ on optimized CdTe/GaAs:Si show very nice transport data with clear Hall plateaus, SdH oscillations, low carrier densities and carrier mobilities up to 500 000 cm^2/Vs. Furthermore, a new oxide etching process is developed and analyzed which should serve as an alternative to the standard HCl process which generates volcano defects at some time. However, during the testing time the result does not differ in Nomarski, HRXRD, AFM and transport measurements. Here, long-time tests or etching and mounting in nitrogen atmosphere may provide new elaborate results. The main focus of this thesis is on the MBE growth and standard characterization of HgTe bulk layers and is discussed in chapter 6. Due to the tensile strained growth on lattice mismatched CdTe, HgTe bulk opens up a band gap of around 22 meV at the G-point and exhibits therefore its topological surface states. The analysis of surface condition, roughness, crystalline quality, carrier density and mobility via Nomarski, AFM, XPS, HRXRD and transport measurements is therefore included in this work. Layer thickness dependence of carrier density and mobility is identified for bulk layer grown directly on CdTe substrates. So, there is no clear correlation visible between HgTe layer thickness and carrier density or mobility. So, the carrier density is almost constant around 1x10^11 cm^(-2) at 0 V gate voltage. The carrier mobility of these bulk samples however scatters between 5 000 and 60 000 cm^2/Vs almost randomly. Further experiments should be made for a clearer understanding and therefore the avoidance of unusable bad samples.But, other topological insulator materials show much higher carrier densities and lower mobility values. For example, Bi2Se3 exhibits just density values around 1019 cm^(-2) and mobility values clearly below 5000 cm2/Vs. The carrier density however depends much on lithography and surface treatment after growth. Furthermore, the relaxation behavior and critical thickness of HgTe grown on CdTe is determined and is in very good agreement with theoretical prediction (d_c = 155 nm). The embedding of the HgTe bulk layer between HgCdTe layers created a further huge improvement. Similar to the quantum well structures the carrier mobility increases immensely while the carrier density levels at around 1x10^11 cm^(-2) at 0 V gate voltage as well. Additionally, the relaxation behavior and critical thickness of these barrier layers has to be determined. HgCdTe grown on commercial CdTe shows a behavior as predicted except the critical thickness which is slightly higher than expected (d_c = 850 nm). Otherwise, the relaxation of HgCdTe grown on CdTe/GaAs:Si occurs in two parts. The layer is fully strained up to 250 nm. Between 250 nm and 725 nm the HgCdTe film starts to relax randomly up to 10 %. The relaxation behavior for thicknesses larger than 725 nm occurs than linearly to the inverse layer thickness. A explanation is given due to rough interface conditions and crystalline defects of the CdTe/GaAs:Si compared to the commercial CdTe substrate. HRXRD and AFM data support this statement. Another point is that the HgCdTe barriers protect the active HgTe layer and because of the high carrier mobilities the Hall measurements provide new transport data which have to be interpreted more in detail in the future. In addition, HgTe bulk samples show very interesting transport data by gating the sample from the top and the back. It is now possible to manipulate the carrier densities of the top and bottom surface states almost separately. The back gate consisting of the n-doped GaAs substrate and the thick insulating CdTe buffer can tune the carrier density for Delta(n) ~ 3x10^11 cm^(-2). This is sufficient to tune the Fermi energy from the p-type into the n-type region [138]. In this thesis it is shown that strained HgTe bulk layers exhibit superior transport data by embedding between HgCdTe barrier layers. The n-doped GaAs can here serve as a back gate. Furthermore, MBE growth of high crystalline, undoped HgTe quantum wells shows also new and extended transport output. Finally, it is notable that due to the investigated CdTe growth on GaAs the Hg-based heterostructure MBE growth is partially independent from commercial suppliers. N2 - In der vorliegenden Dissertation wurde das MBE-Wachstum von HgTe Strukturen erforscht und die anschließende Probencharakterisierung durchgeführt und diskutiert. Durch die erste experimentelle Entdeckung des Quanten-Spin-Hall-Effekts (QSHE) in HgTe Quantentrögen hat dieses Materialsystem großes Interesse im Gebiet der Spintronics erfahren. Aufgrund der langen Wachstumshistorie von quecksilberbasierenden Heterostrukturen am Lehrstuhl Experimentelle Physik III der Universität Würzburg sind die Voraussetzungen ausgesprochen gut, um dieses Materialsystem sehr ausführlich und auch in neue Richtungen hin zu untersuchen. Da vor dieser Doktorarbeit fast ausschließlich dotierte HgTe Quantentröge auf verschiedenen Substratorientierungen gewachsen wurden, beschäftigte sich diese Dissertation nun mit dem MBE-Wachstum von undotierten HgTe Quantentrögen, oberflächennahen Quantentrögen und dreidimensionalen Volumenkristallen. Alle quecksilberbasierenden Schichten wurden hierzu auf CdTe Substraten gewachsen, welche tensile Verspannung in den Schichten erzeugten und lieferten daher neue physikalische Effekte. In der selben Zeit wurde weiterhin das Wachstum von (001) CdTe auf n-dotiertem (001) GaAs:Si erforscht, da der japanische Zulieferer der CdTe Substrate eine Lieferengpass hatte aufgrund des Tohoku Erdbebens und seinen verheerenden Folgen im Jahr 2011. Die Erforschung des MBE-Wachstums von (001) CdTe auf (001) GaAs:Si wird im Kapitel 4 behandelt. Zuerst wurde hier die Oberflächenvorbereitung des GaAs:Si Substrates durch thermische Desorption untersucht und ausgewertet. Es stellte sich heraus, dass schnelle, thermische Desorption des GaAs - Oxides mit anschließendem Abkühlen in Zn Atmosphäre die besten Ergebnisse für das spätere CdTe durch kleine Löcher an der Oberfläche liefert, während zum Beispiel ein glatter GaAs Puffer das CdTe Wachstum verschlechtert. Der folgende ZnTe Film verschafft die gewünschte (001) Wachstumsrichtung für CdTe und weist bei 30 Sekunden Wachstumszeit bei einem Flussverhältnis von Zn/Te ~ 1/1.2 die besten Endergebnisse für CdTe auf. Jedoch war die Haupterneuerung hier die Optimierung des CdTe Wachstums. Dafür wurde ein komplexer Wachstumsprozess entwickelt und etabliert. Dieser optimierte CdTe Wachstumsprozess lieferte Ergebnisse von einer RMS Rauigkeit von ungefähr 2.5 nm und FWHMWerte der HRXRD w-Scans von 150 arcsec. Die Defektätzdichte-Messung zeigte weiterhin, dass die Oberflächenkristallinität vergleichbar mit kommerziell erwerbbaren CdTe Substraten ist (um 1x10^4 cm^(-2)). Des Weiteren ist kein niedrigerer Wert für die Halbwertsbreite des w-Scans in der Literatur für diese Wachstumsrichtung aufgeführt. Dies spiricht ebenfalls für die hohe Qualität der Schichten. Jedoch ist dieser Wachstumsprozess noch nicht endgültig ausgereift und bietet weiterhin noch Platz für Verbesserungen. Das Wachstum von undotierten HgTe Quantentrögen war ebenso eine neue Forschungsrichtung im Gegensatz zu den dotierten HgTe Quantentrögen, die in der Vergangenheit gewachsen wurden. Das Ziel hierbei, die Ladungsträgerdichte zu verringern, wurde erreicht und daher ist es nun möglich, Transportexperimente sowohl im n- als auch im p-Regime durchzuführen, indem eine Gatespannung angelegt wird. Des Weiteren experimentierten andere Arbeitsgruppen mit diesen Quantentrögen, bei denen die Fermi Energie in der Bandlücke liegt [143]. Außerdem wurde das sehr präzise MBE Wachstum anhand von symmetrischen HgTe Quantentrögen und ihren HRXRD Charakterisierungen behandelt. Daher kann nun die Quantentrogdicke präzise auf 0,3 nm angegeben werden. Die Transportergebnisse von verschieden dicken Quantentrögen zeigten, dass die Ladungsträgerdichte und Beweglichkeit mit steigender HgTe Schichtdicke zunimmt. Jedoch wurde auch herausgefunden, dass sich die Bandlücke von HgTe Quantentrögen indirekt bei einer Dicke von 11.6 nm schließt. Dies wird durch das verspannte Wachstum auf CdTe Substraten verursacht. Überdies wurden oberflächennahe Quantentröge untersucht. Diese Quantentröge besitzen keine oder nur eine sehr dünne HgCdTe Deckschicht. Allerdings verringerte Oxidation und Oberflächenverschmutzung hier die Ladungsträgerbeweglichkeit dramatisch und eine HgCdTe Schicht von ungefähr 5 nm lieferte ansprechende Transportergebnisse für Supraleiter, die den topologischen Isolator kontaktieren. Eine komplett neue Errungenschaft war die Realisierung, via MBE, HgTe Quantentröge auf CdTe/GaAs:Si Substrate zu wachsen. Dies ging einher mit der Optimierung des CdTe Wachstums auf GaAs:Si. Es zeigte sich, dass HgTe Quantentröge, die in-situ auf optimierten CdTe/GaAs:Si gewachsen wurden, sehr schöne Transportergebnisse mit deutlichen Hall Quantisierungen, SdH Oszillationen, niedrigen Ladungsträgerdichten und Beweglichkeiten bis zu 500 000 cm^2/Vs erreichen. Des Weiteren wurde ein neues Oxidätzverfahren entwickelt und untersucht, welches als Alternative zum Standard-HCl-Prozess dienen sollte, da dieses manchmal vulkan-artige Defekte hervorruft. Jedoch ergab sich kein Unterschied in den Nomarski, HRXRD, AFM und Transportexperimenten. Hier könnten vielleicht Langzeittests oder Ätzen und Befestigen in Stickstoffatmosphäre neue, gewinnbringende Ergbnisse aufzeigen. Der Hauptfokus dieser Doktorarbeit lag auf dem MBE Wachstum und der Standardcharakterisierung von HgTe Volumenkristallen und wurde in Kapitel 6 diskutiert. Durch das tensil verpannte Wachstum auf CdTe entsteht für HgTe als Volumenkristall eine Bandlücke von ungefähr 22 meV am G Punkt und zeigt somit seine topologischen Oberflächenzustände. Die Analyse der Oberfächenbeschaffenheit, der Rauigkeit, der kristallinen Qualität, der Ladungsdrägerdichte und Beweglichkeit mit Hilfe von Nomarski, AFM, XPS, HRXRD und Transportmessungen ist in dieser Arbeit anzutreffen. Außerdem wurde die Schichtdickenabhängigkeit von Ladungsträgerdichte und Beweglichkeit von HgTe Volumenkristallen, die direkt auf CdTe Substraten gewachsen wurden, ermittelt worden. So erhöhte sich durchschnittlich die Dichte und Beweglichkeit mit zunehmender HgTe Schichtdicke, aber die Beweglichkeit ging selten über μ ~ 40 000 cm^2/Vs hinaus. Die Ladungsträgerdichte n hing jedoch sehr von der Litographie und der Behandlung der Oberfläche nach dem Wachstum ab. Des Weiteren wurde das Relaxationsverhalten und die kritische Dicke bestimmt, welches sehr gut mit den theoretischen Vorhersagen übereinstimmt (dc = 155 nm). Das Einbetten des HgTe Volumenkristalls in HgCdTe Schichten brachte eine weitere große Verbesserung mit sich. Ähnlich wie bei den Quantentrögen erhörte sich die Beweglichkeit μ immens, während sich die Ladungsträgerdichte bei ungefähr 1x10^11 cm^(-2) einpendelte. Zusätzlich wurde auch hier das Relaxationsverhalten und die kritische Schichtdicke dieser Barrierenschichten ermittelt. HgCdTe, gewachsen auf kommerziellen CdTe Substraten, zeigte ein Verhalten ähnlich zu dem Erwarteten mit der Ausnahme, dass die kritische Schichtdicke leicht höher ist als die Vorhergesagte (dc = 850 nm). Auf der anderen Seite findet die Relaxation von HgCdTe auf CdTe/GaAs:Si zweigeteilt ab. Bis 250 nm ist die Schicht noch voll verspannt. Zwischen 250 nm und 725 nm beginnt die HgCdTe Schicht willkürlich bis zu 10 % zu relaxieren. Das Relaxationsverhalten für Dicken über 725 nm findet dann wieder linear zur invers aufgetragenen Schichtdicke statt. Eine Erklärung wurde durch das raue Interface der Schichten und der Defekte im Kristall von CdTe/GaAs:Si gegeben, im Vergleich zu den kommerziellen CdTe Substraten. HRXRD und AFM Ergebnisse belegten diese Aussage. Die HgCdTe Barrieren schützen die aktive HgTe Schicht und daher liegen nach Hall Messungen aufgrund der hohen Ladungsträgerbeweglichkeiten neue Transportergbnisse vor, welche in der Zukunft ausführlicher interpretiert werden müssen. Darüber hinaus zeigten HgTe Volumenkristalle neue, interessante Transportergebnisse durch das gleichzeitige Benutzen eines Top- und Backgates. Es ist nun möglich, die Ladungsträger der oberen und unteren Oberflächenzustände nahezu getrennt zu verändern und zu ermitteln. Das Backgate, bestehend aus dem n-dotierten GaAs:Si Substrate und dem dicken isolierenden CdTe Puffer, kann die Ladungsträgerdichte um ungefähr Delta(n) ~ 3x10^11 cm^(-2) varieren. Das ist ausreichend, um die Fermi Energie vom p- in den n-Bereich einzustellen [138]. In dieser Dissertation wurde also gezeigt, dass verspannte HgTe Volumenkristalle durch das Einbetten in HgCdTe Barrieren neue Transportergebnisse liefern. Das n-dotierte GaAs konnte hierbei als Backgate genutzt werden. Des Weiteren zeigte das MBE Wachstum von hochkristallinen , undotiereten HgTe Quantentrögen ebenso neue und erweiterte Transportergebnisse. Zuletzt ist es bemerkenswert, dass durch das erforschte CdTe Wachstum auf GaAs das MBE Wachstum von quecksilberbasierenden Heterostrukturen auf CdTe Substraten teilweise unabhänigig ist von kommerziellen Zulieferbetrieben. KW - Quecksilbertellurid KW - Topologischer Isolator KW - MBE KW - HgTe KW - topological insulator KW - Molekularstrahlepitaxie Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-151136 ER - TY - JOUR A1 - Sonnenberg, Christoph A1 - Bannert, Maria T1 - Discovering the Effects of Metacognitive Prompts on the Sequential Structure of SRL-Processes Using Process Mining Techniques JF - Journal of Learning Analystics N2 - According to research examining self‐regulated learning (SRL), we regard individual regulation as a specific sequence of regulatory activities. Ideally, students perform various learning activities, such as analyzing, monitoring, and evaluating cognitive and motivational aspects during learning. Metacognitive prompts can foster SRL by inducing regulatory activities, which, in turn, improve the learning outcome. However, the specific effects of metacognitive support on the dynamic characteristics of SRL are not understood. Therefore, the aim of our study was to analyze the effects of metacognitive prompts on learning processes and outcomes during a computer‐based learning task. Participants of the experimental group (EG, n=35) were supported by metacognitive prompts, whereas participants of the control group (CG, n=35) received no support. Data regarding learning processes were obtained by concurrent think‐aloud protocols. The EG exhibited significantly more metacognitive learning events than did the CG. Furthermore, these regulatory activities correspond positively with learning outcomes. Process mining techniques were used to analyze sequential patterns. Our findings indicate differences in the process models of the EG and CG and demonstrate the added value of taking the order of learning activities into account by discovering regulatory patterns. KW - HeuristicsMiner algorithm KW - self‐regulated learning KW - metacognitive prompting KW - process analysis KW - process mining KW - think‐aloud data Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-152362 UR - http://learning-analytics.info/journals/index.php/JLA/article/view/4090 SN - 1929‐7750 N1 - Dieser Artikel ist auch Bestandteil der Dissertation: Sonnenberg, Christoph: Analyzing Technology-Enhanced Learning Processes: What Can Process Mining Techniques Contribute to the Evaluation of Instructional Support?. - Würzburg, Univ., Diss., 2017. - [online]. URN: urn:nbn:de:bvb:20-opus-152354 VL - 2 IS - 1 ER -