TY  - JOUR
A1  - Dyksik, M.
A1  - Motyka, M.
A1  - Kurka, M.
A1  - Ryczo, K.
A1  - Dallner, M.
A1  - Höfling, S.
A1  - Kamp, M.
A1  - Sęk, G.
A1  - Misiwicz, J.
T1  - Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates
JF  - Optical and Quantum Electronics
N2  - Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.
KW  - Interband cascade lasers
KW  - Quantum wells
KW  - MU-M
KW  - Fourier-transform spectroscopy
KW  - Mid-infrared photoluminescence
KW  - Type II quantum wells
KW  - Localized states
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-204672
VL  - 48
IS  - 401
ER  -