TY  - JOUR
A1  - Simin, D.
A1  - Soltamov, V. A.
A1  - Poshakinskiy, A. V.
A1  - Anisimov, A. N.
A1  - Babunts, R. A.
A1  - Tolmachev, D. O.
A1  - Mokhov, E. N.
A1  - Trupke, M.
A1  - Tarasenko, S. A.
A1  - Sperlich, A.
A1  - Baranov, P. G.
A1  - Dyakonov, V.
A1  - Astakhov, G. V.
T1  - All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
JF  - Physical Review X
N2  - We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-\(^{28}\)SiC) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/√Hz within a volume of 3×10\(^{−7}\)mm\(^3\) at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm\(^3\), the projection noise limit is below 100  fT/√Hz.
KW  - condensed matter physics
KW  - optoelectronics
KW  - spintronics
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-147682
VL  - 6
ER  - 
TY  - JOUR
A1  - Fuchs, F.
A1  - Stender, B.
A1  - Trupke, M.
A1  - Simin, D.
A1  - Pflaum, J.
A1  - Dyakonov, V.
A1  - Astakhov, G.V.
T1  - Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
JF  - Nature Communications
N2  - Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.
KW  - nuclear magnetic resonance
KW  - coherent control
KW  - 4H
KW  - phosphorus
KW  - qubits
KW  - defects
KW  - entanglement
KW  - room temperature
KW  - vacancy
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-148502
VL  - 6
IS  - 7578
ER  -