TY - JOUR A1 - Pfenning, Andreas A1 - Krüger, Sebastian A1 - Jabeen, Fauzia A1 - Worschech, Lukas A1 - Hartmann, Fabian A1 - Höfling, Sven T1 - Single-photon counting with semiconductor resonant tunneling devices JF - Nanomaterials N2 - Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown. KW - single-photon detectors KW - resonant tunneling diode KW - photon counting KW - III–V semiconductor devices Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-281922 SN - 2079-4991 VL - 12 IS - 14 ER - TY - JOUR A1 - Rothmayr, Florian A1 - Guarin Castro, Edgar David A1 - Hartmann, Fabian A1 - Knebl, Georg A1 - Schade, Anne A1 - Höfling, Sven A1 - Koeth, Johannes A1 - Pfenning, Andreas A1 - Worschech, Lukas A1 - Lopez-Richard, Victor T1 - Resonant tunneling diodes: mid-infrared sensing at room temperature JF - Nanomaterials N2 - Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities. KW - resonant tunneling diode KW - mid-infrared sensing KW - photosensor Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-267152 SN - 2079-4991 VL - 12 IS - 6 ER - TY - JOUR A1 - Wyborski, Paweł A1 - Musiał, Anna A1 - Mrowiński, Paweł A1 - Podemski, Paweł A1 - Baumann, Vasilij A1 - Wroński, Piotr A1 - Jabeen, Fauzia A1 - Höfling, Sven A1 - Sęk, Grzegorz T1 - InP-substrate-based quantum dashes on a DBR as single-photon emitters at the third telecommunication window JF - Materials N2 - We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications. KW - single-photon emitter KW - III–V quantum dot KW - telecommunication spectral range KW - photonic structure KW - extraction efficiency Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-228773 SN - 1996-1944 VL - 14 IS - 4 ER - TY - JOUR A1 - Rau, Markus A1 - Heindel, Tobias A1 - Unsleber, Sebastian A1 - Braun, Tristan A1 - Fischer, Julian A1 - Frick, Stefan A1 - Nauerth, Sebastian A1 - Schneider, Christian A1 - Vest, Gwenaelle A1 - Reitzenstein, Stephan A1 - Kamp, Martin A1 - Forchel, Alfred A1 - Höfling, Sven A1 - Weinfurter, Harald T1 - Free space quantum key distribution over 500 meters using electrically driven quantum dot single-photon sources-a proof of principle experiment JF - New Journal of Physics N2 - Highly efficient single-photon sources (SPS) can increase the secure key rate of quantum key distribution (QKD) systems compared to conventional attenuated laser systems. Here we report on a free space QKD test using an electrically driven quantum dot single-photon source (QD SPS) that does not require a separate laser setup for optical pumping and thus allows for a simple and compact SPS QKD system. We describe its implementation in our 500 m free space QKD system in downtown Munich. Emulating a BB84 protocol operating at a repetition rate of 125 MHz, we could achieve sifted key rates of 5-17 kHz with error ratios of 6-9% and g((2))(0)-values of 0.39-0.76. KW - QKD KW - electrically driven KW - free space KW - quantum dots KW - quantum key distribution Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-116760 VL - 16 IS - 043003 ER - TY - JOUR A1 - Braun, T. A1 - Schneider, C. A1 - Maier, S. A1 - Igusa, R. A1 - Iwamoto, S. A1 - Forchel, A. A1 - Höfling, S. A1 - Arakawa, Y. A1 - Kamp, M. T1 - Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots JF - AIP Advances N2 - In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s). KW - GAAS Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-115448 SN - 2158-3226 VL - 4 IS - 9 ER -