TY  - JOUR
A1  - Arca, Francesco
A1  - Tedde, Sandro F.
A1  - Sramek, Maria
A1  - Rauh, Julia
A1  - Lugli, Paolo
A1  - Hayden, Oliver
T1  - Interface Trap States in Organic Photodiodes
JF  - Scientific Reports
N2  - Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several \(cm^2\), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels. We demonstrate that, despite the large OPD capacitances of similar to 10 nF \(cm^{-2}\), a frequency response in the kHz regime can be achieved at light levels as low as 20 nW \(cm^{-2}\) by appropriate interface engineering, which corresponds to a 1000-fold increase compared to state-of-the-art OPDs. Such device characteristics indicate that large active area OPDs are suitable for industrial sensing and even match medical requirements for single X-ray pulse detection in the millisecond range.
KW  - ultrafast photonics
KW  - materials for optics
KW  - electrical and electronic engineering
KW  - polymers
Y1  - 2013
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-131507
VL  - 3
ER  -