TY  - JOUR
A1  - Suchomel, H.
A1  - Brodbeck, S.
A1  - Liew, T. C. H.
A1  - Amthor, M.
A1  - Klaas, M.
A1  - Klembt, S.
A1  - Kamp, M.
A1  - Höfling, S.
A1  - Schneider, C.
T1  - Prototype of a bistable polariton field-effect transistor switch
JF  - Scientific Reports
N2  - Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.
KW  - materials for optics
KW  - nanoscience and technology
KW  - optics and photonics
KW  - semiconductors
Y1  - 2017
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-158323
VL  - 7
IS  - 5114
ER  - 
TY  - JOUR
A1  - Ryczko, K.
A1  - Misiewicz, J.
A1  - Hofling, S.
A1  - Kamp, M.
A1  - Sęk, G.
T1  - Optimizing the active region of interband cascade lasers for passive mode-locking
JF  - AIP Advances
N2  - The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.
KW  - physics
KW  - electrostatics
KW  - transition radiation
KW  - oscillator strengths
KW  - laser spectroscopy
KW  - optical spectroscopy
KW  - atomic and molecular spectroscopy,
KW  - frequency combs
KW  - quantum wells
KW  - laser physics
Y1  - 2017
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-181790
VL  - 7
IS  - 1
ER  -