TY  - THES
A1  - Fijalkowski, Kajetan Maciej
T1  - Electronic Transport in a Magnetic Topological Insulator (V,Bi,Sb)\(_2\)Te\(_3\)
T1  - Elektronischer Transport in einem magnetischen topologischen Isolator (V,Bi,Sb)\(_2\)Te\(_3\)
N2  - This thesis focuses on investigating magneto-transport properties of a ferromagnetic topological insulator (V,Bi,Sb)2Te3. This material is most famously known for exhibiting the quantum anomalous Hall effect, a novel quantum state of matter that has opened up possibilities for potential applications in quantum metrology as a quantum standard of resistance, as well as for academic investigations into unusual magnetic properties and axion electrodynamics. All of those aspects are investigated in the thesis.
N2  - Im Mittelpunkt dieser Arbeit steht die Untersuchung der Magneto-Transporteigenschaften des ferromagnetischen topologischen Isolators (V,Bi,Sb)2Te3. Dieses Material ist vor allem dafür bekannt, dass es den quantenanormalen Hall-Effekt aufweist, einen neuartigen Quantenzustand der Materie, der Möglichkeiten für potenzielle Anwendungen in der Quantenmetrologie als Quantenstandard des Widerstands sowie für wissenschaftliche Untersuchungen zu ungewöhnlichen magnetischen Eigenschaften und der Axion-Elektrodynamik eröffnet hat. All diese Aspekte werden in dieser Arbeit untersucht.
KW  - Topologischer Isolator
KW  - Axion
KW  - Bismutselenide
KW  - Transportprozess
KW  - Surface states
KW  - Magnetic Topological Insulator
KW  - Quantum anomalous Hall effect
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-282303
ER  - 
TY  - JOUR
A1  - Fornari, C. I.
A1  - Rappl, P. H. O.
A1  - Morelhao, S. L.
A1  - Peixoto, T. R. F.
A1  - Bentmann, H.
A1  - Reinert, F.
A1  - Abramof, E.
T1  - Preservation of pristine Bi\(_2\)Te\(_3\) thin film topological insulator surface after ex situ mechanical removal of Te capping layer
JF  - APL Materials
N2  - Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method was applied to Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily to other methods, this technique does not require any sputtering or thermal annealing setups installed inside the analyzing system and preserves both film thickness and surface characteristics. These results suggest that the technique presented here can be expanded to other topological insulator materials.
KW  - Insulator surfaces
KW  - Atomic force microscopy
KW  - Insulating thin films
KW  - Molecular beam epitaxy
KW  - Surface states
KW  - Vacuum chambers
KW  - Thin film growth
KW  - Sputter deposition
KW  - Epitaxy
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-164468
VL  - 4
ER  -