TY  - JOUR
A1  - Becker, Charles R.
A1  - He, L.
A1  - Einfeldt, S.
A1  - Wu, Y. S.
A1  - Lérondel, G.
A1  - Heinke, H.
A1  - Oehling, S.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs
N2  - In this paper, we present results on the first MBE growth of HgSe. The influence of the GaAs substrate temperature as well as the Hg and Se fluxes on the growth and the electrical properties has been investigated. It has been found that the growth rate is very low at substrate temperatures above 120°C. At 120°C and at lower temperatures, the growth rate is appreciably higher. The sticking coefficient of Se seems to depend inversely on the Hg/Se flux ratio. Epitaxial growth could be maintained at 70°C with Hg/Se flux ratios between lOO and ISO, and at 160°C between 280 and 450. The electron mobilities of these HgSe epilayers at room temperature decrease from a maximum value of 8.2 x 10^3 cm2 /V' s with increasing electron concentration. The concentration was found to be between 6xlO^17 and 1.6x10^19 cm- 3 at room temperature. Rocking curves from X-ray diffraction measurements of the better epilayers have a full width at half maximum of 5S0 arc sec.
KW  - Physik
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-50947
ER  - 
TY  - JOUR
A1  - He, L.
A1  - Becker, Charles R.
A1  - Bicknell-Tassius, R. N.
A1  - Scholl, S.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth of (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38044
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - von Schierstedt, K.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Surface sublimation of zinc blende CdTe
N2  - The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy. These experiments verify that Te is much easier to evaporate than Cd. The experimental value for the Te activation energy from a Te stabilized (111)A CdTe surface is 1.41 ±0.1O eV, which is apparently inconsistent with recent theoretical results.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37829
ER  - 
TY  - JOUR
A1  - He, L.
A1  - Becker, Charles R.
A1  - Bicknell-Tassius, R. N.
A1  - Scholl, S.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37885
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Removal of oxygen and reduction of carbon contamination on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38014
ER  -