TY - JOUR A1 - Ryczko, K. A1 - Misiewicz, J. A1 - Hofling, S. A1 - Kamp, M. A1 - Sęk, G. T1 - Optimizing the active region of interband cascade lasers for passive mode-locking JF - AIP Advances N2 - The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices. KW - physics KW - electrostatics KW - transition radiation KW - oscillator strengths KW - laser spectroscopy KW - optical spectroscopy KW - atomic and molecular spectroscopy, KW - frequency combs KW - quantum wells KW - laser physics Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-181790 VL - 7 IS - 1 ER - TY - JOUR A1 - Rudno-Rudziński, W. A1 - Syperek, M. A1 - Andrezejewski, J. A1 - Maryński, A. A1 - Misiewicz, J. A1 - Somers, A. A1 - Höfling, S. A1 - Reithmaier, J. P. A1 - Sęk, G. T1 - Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 μm emission JF - AIP Advances N2 - We have investigated optical properties of hybrid two-dimensional-zero-dimensional (2D-0D) tunnel structures containing strongly elongated InAs/InP(001) quantum dots (called quantum dashes), emitting at 1.55 μm. These quantum dashes (QDashes) are separated by a 2.3 nm-width barrier from an InGaAs quantum well (QW), lattice matched to InP. We have tailored quantum-mechanical coupling between the states confined in QDashes and a QW by changing the QW thickness. By combining modulation spectroscopy and photoluminescence excitation, we have determined the energies of all relevant optical transitions in the system and proven the carrier transfer from the QW to the QDashes, which is the fundamental requirement for the tunnel injection scheme. A transformation between 0D and mixed-type 2D-0D character of an electron and a hole confinement in the ground state of the hybrid system have been probed by time-resolved photoluminescence that revealed considerable changes in PL decay time with the QW width changes. The experimental discoveries have been explained by band structure calculations in the framework of the eight-band k·p model showing that they are driven by delocalization of the lowest energy hole state. The hole delocalization process from the 0D QDash confinement is unfavorable for optical devices based on such tunnel injection structures. KW - physics KW - surface collisions KW - electronic coupling KW - transition radiation KW - time-resolved photoluminescence KW - photoluminescence excitation KW - modulation spectroscopy KW - quantum dots KW - quantum wells KW - delocalization Y1 - 2017 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-181787 VL - 7 IS - 1 ER - TY - JOUR A1 - Motyka, M. A1 - Dyksik, M. A1 - Ryczko, K. A1 - Weih, R. A1 - Dallner, M. A1 - Höfling, S. A1 - Kamp, M. A1 - Sęk, G. A1 - Misiewicz, J. T1 - Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing JF - Applied Physics Letters N2 - Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters. KW - modulation spectroscopy KW - semiconductors KW - Type-II quantum well KW - interband cascade laser KW - GaAsSb Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-189795 VL - 108 IS - 10 ER - TY - JOUR A1 - Dyksik, M. A1 - Motyka, M. A1 - Kurka, M. A1 - Ryczo, K. A1 - Dallner, M. A1 - Höfling, S. A1 - Kamp, M. A1 - Sęk, G. A1 - Misiwicz, J. T1 - Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates JF - Optical and Quantum Electronics N2 - Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer. KW - Interband cascade lasers KW - Quantum wells KW - MU-M KW - Fourier-transform spectroscopy KW - Mid-infrared photoluminescence KW - Type II quantum wells KW - Localized states Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-204672 VL - 48 IS - 401 ER -