TY  - JOUR
A1  - Waag, A.
A1  - Heinke, H.
A1  - Scholl, S.
A1  - Becker, Charles R.
A1  - Landwehr, G.
T1  - Growth of MgTe and Cd\(_{1-x}\)Mg\(_x\)Te thin films by molecular beam epitaxy
N2  - We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37917
ER  - 
TY  - JOUR
A1  - He, L.
A1  - Becker, Charles R.
A1  - Bicknell-Tassius, R. N.
A1  - Scholl, S.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth of (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38044
ER  - 
TY  - JOUR
A1  - Kraus, M. M.
A1  - Becker, Charles R.
A1  - Scholl, S.
A1  - Wu, Y. S.
A1  - Yuan, S.
A1  - Landwehr, G.
T1  - Infrared photoluminescence on molecular beam epitaxially  grown Hg\(_{1-x}\)Cd\(_x\)Te layers
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38053
ER  - 
TY  - JOUR
A1  - He, L.
A1  - Becker, Charles R.
A1  - Bicknell-Tassius, R. N.
A1  - Scholl, S.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37885
ER  - 
TY  - CHAP
A1  - Bicknell-Tassius, R. N.
A1  - Scholl, S.
A1  - Becker, Charles R.
A1  - Landwehr, G.
T1  - High magnetic field transport in II-VI heterostructures
N2  - In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were carried out at temperatures in the range 0.4 - 4.2 K in magnetic fields up to 10.0 T. Further, we point out the necessity of using multicarrier models for data interpretation and show finally some Shubnikov-de-Haas results on sampies with high mobility carners.
Y1  - 1992
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37797
ER  -