TY  - JOUR
A1  - Ryczko, K.
A1  - Misiewicz, J.
A1  - Hofling, S.
A1  - Kamp, M.
A1  - Sęk, G.
T1  - Optimizing the active region of interband cascade lasers for passive mode-locking
JF  - AIP Advances
N2  - The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.
KW  - physics
KW  - electrostatics
KW  - transition radiation
KW  - oscillator strengths
KW  - laser spectroscopy
KW  - optical spectroscopy
KW  - atomic and molecular spectroscopy,
KW  - frequency combs
KW  - quantum wells
KW  - laser physics
Y1  - 2017
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-181790
VL  - 7
IS  - 1
ER  -