TY  - JOUR
A1  - Wen, Xinbo
A1  - Nowak-Król, Agnieszka
A1  - Nagler, Oliver
A1  - Kraus, Felix
A1  - Zhu, Na
A1  - Zheng, Nan
A1  - Müller, Matthias
A1  - Schmidt, David
A1  - Xie, Zengqi
A1  - Würthner, Frank
T1  - Tetrahydroxy-perylene bisimide embedded in zinc oxide thin film as electron transporting layer for high performance non-fullerene organic solar cells
JF  - Angewandte Chemie International Edition
N2  - By introduction of four hydroxy (HO) groups into the two perylene bisimide (PBI) bay areas, new HO‐PBI ligands were obtained which upon deprotonation can complex ZnII ions and photosensitize semiconductive zinc oxide thin films. Such coordination is beneficial for dispersing PBI photosensitizer molecules evenly into metal oxide films to fabricate organic–inorganic hybrid interlayers for organic solar cells. Supported by the photoconductive effect of the ZnO:HO‐PBI hybrid interlayers, improved electron collection and transportation is achieved in fullerene and non‐fullerene polymer solar cell devices, leading to remarkable power conversion efficiencies of up to 15.95 % for a non‐fullerene based organic solar cell.
KW  - hydroxylation
KW  - metal complexenes
KW  - perylene bisimide
KW  - photoconductive interlayer
KW  - solar cells
Y1  - 2019
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-204723
VL  - 58
IS  - 37
ER  - 
TY  - JOUR
A1  - Tvingstedt, Kristofer
A1  - Malinkiewicz, Olga
A1  - Baumann, Andreas
A1  - Deibel, Carsten
A1  - Snaith, Henry J.
A1  - Dyakonov, Vladimir
A1  - Bolink, Henk J.
T1  - Radiative efficiency of lead iodide based perovskite solar cells
JF  - Scientific Reports
N2  - The maximum efficiency of any solar cell can be evaluated in terms of its corresponding ability to emit light. We herein determine the important figure of merit of radiative efficiency for Methylammonium Lead Iodide perovskite solar cells and, to put in context, relate it to an organic photovoltaic (OPV) model device. We evaluate the reciprocity relation between electroluminescence and photovoltaic quantum efficiency and conclude that the emission from the perovskite devices is dominated by a sharp band-to-band transition that has a radiative efficiency much higher than that of an average OPV device. As a consequence, the perovskite have the benefit of retaining an open circuit voltage ~0.14 V closer to its radiative limit than the OPV cell. Additionally, and in contrast to OPVs, we show that the photoluminescence of the perovskite solar cell is substantially quenched under short circuit conditions in accordance with how an ideal photovoltaic cell should operate.
KW  - solar cells
KW  - optical spectroscopy
Y1  - 2014
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-119360
VL  - 4
ER  - 
TY  - JOUR
A1  - Baumann, A.
A1  - Tvingstedt, K.
A1  - Heiber, M. C.
A1  - Väth, S.
A1  - Momblona, C.
A1  - Bolink, H. J.
A1  - Dyakonov, V.
T1  - Persistent photovoltage in methylammonium lead iodide perovskite solar cells
JF  - APL Materials
N2  - We herein perform open circuit voltage decay (OCVD) measurements on methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells to increase the understanding of the charge carrier recombination dynamics in this emerging technology. Optically pulsed OCVD measurements are conducted on CH3NH3PbI3 solar cells and compared to results from another type of thin-film photovoltaics, namely, the two reference polymer–fullerene bulk heterojunction solar cell devices based on P3HT:PC60BM and PTB7:PC70BM blends. We observe two very different time domains of the voltage transient in the perovskite solar cell with a first drop on a short time scale that is similar to the decay in the studied organic solar cells. However, 65%–70% of the maximum photovoltage persists on much longer timescales in the perovskite solar cell than in the organic devices. In addition, we find that the recombination dynamics in all time regimes are dependent on the starting illumination intensity, which is also not observed in the organic devices. We then discuss the potential origins of these unique behaviors.
KW  - solar cells
KW  - illumination
KW  - dielectric oxides
KW  - carrier density
KW  - bioelectrochemistry
Y1  - 2014
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-119397
VL  - 2
IS  - 8
ER  - 
TY  - JOUR
A1  - Kiermasch, David
A1  - Rieder, Philipp
A1  - Tvingstedt, Kristofer
A1  - Baumann, Andreas
A1  - Dyakonov, Vladimir
T1  - Improved charge carrier lifetime in planar perovskite solar cells by bromine doping
JF  - Scientific Reports
N2  - The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI\(_3\)) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI\(_3\) by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.
KW  - devices for energy harvesting
KW  - solar cells
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-147976
VL  - 6
ER  - 
TY  - THES
A1  - Weinhardt, Lothar
T1  - Elektronische und chemische Eigenschaften von Grenzflächen und Oberflächen in optimierten Cu(In,Ga)(S,Se)2 Dünnschichtsolarzellen
T1  - Electronical and chemical properties of interfaces and surfaces in optimized Cu(In,Ga)(S,Se)2 thin film solar cells
N2  - In der vorliegenden Arbeit wurden Untersuchungen an Dünnschichtsolarzellen auf der Basis von Cu(In,Ga)(S,Se)2, der heute vielversprechendsten Dünnschichttechnologie, durchgeführt. Für eine weitere Optimierung der Zellen ist ein detailliertes Verständnis ihrer chemischen, elektronischen und strukturellen Eigenschaften notwendig. Insbesondere die in dieser Arbeit untersuchten Eigenschaften an den Grenzflächen der Zelle sind aufgrund ihrer zentralen Rolle für den Ladungsträgertransport von besonderem Interesse. Bei den vorliegenden Untersuchungen kamen verschiedene Spektroskopien zum Einsatz. Mit einer Kombination von Photoelektronenspektroskopie und Inverser Photoelektronenspektroskopie war es möglich, sowohl eine direkte Bestimmung der Valenz- und Leitungsbandanpassungen an den untersuchten Grenzflächen durchzuführen als auch Oberflächenbandlücken zu bestimmen. Die Messungen wurden durch die volumenempfindliche Röntgenemissionsspektroskopie ideal ergänzt, die - wie diese Arbeit zeigt - zusammen mit der Photoelektronenspektroskopie besonders nützlich bei der Analyse des Durchmischungsverhaltens an Grenzflächen oder auch des Einflusses chemischer Behandlungen auf die chemischen und elektronischen Eigenschaften von Oberflächen ist. Im ersten Teil der Arbeit wurden vier Grenzflächen in Proben auf der Basis des Cu(In,Ga)(S,Se)2-Absorbers von Shell Solar (München) untersucht. Es konnte dabei zunächst das Durchmischungsverhalten an der CdS/CuIn(S,Se)2-Grenzfläche in Abhängigkeit des S-Gehaltes an der Absorberoberfläche untersucht werden. Bei Messungen an der i-ZnO/CdS-Grenzfläche wurde ein flacher Leitungsbandverlauf gefunden, zudem konnte eine Durchmischung an dieser Grenzfläche ausgeschlossen werden. Eine besondere Herausforderung stellten die Messungen an der Grenzfläche des Absorbers zum Molybdänrückkontakt dar, da diese Grenzfläche nach ihrem Entstehen unweigerlich unter der etwa 1-2 um dicken Absorberschicht begraben liegt. Durch geeignetes Abspalten des Absorbers vom Rückkontakt gelang es, diese Grenzfläche freizulegen und zu spektroskopieren. Die Untersuchungen zur Vorbehandlung des Shell-Absorbers mit einer ammoniakalischen Cd-Lösung dienten dem Verständnis der positiven Einflüsse dieser Behandlung auf den Zellwirkungsgrad. Dabei wurde neben verschiedenen Reinigungswirkungen auf den Absorber als wichtigster Befund die Bildung einer sehr dünnen CdS-Schicht und, für hohe Cd-Konzentrationen, einer zusätzlichen Cd(OH)2-Schicht auf der Absorberoberfläche nachgewiesen. Die gewonnenen Erkenntnisse über die Cd-Behandlung haben eine besondere Bedeutung für die Untersuchung der Grenzfläche des Absorbers und einer mit ILGAR ("Ion Layer Gas Reaction") hergestellten Zn(O,OH)-Pufferschicht. An dieser Grenzfläche wurde die Bandanpassung mit und ohne vorherige Cd-Behandlung des Absorbers vermessen. Wird die Bandanpassung ohne Vorbehandlung noch durch Adsorbate auf dem Absorber dominiert, wobei man ein "Cliff" im Leitungsband findet, so ist der Leitungsbandverlauf für die Grenzfläche mit Cd-behandeltem Absorber flach, was im Einklang mit den sehr guten Wirkungsgraden steht, die mit solchen Zellen erreicht werden. Im zweiten Teil der Arbeit wurden Messungen an Dünnschichtsolarzellen mit selenfreiem Cu(In,Ga)S2 Absorber diskutiert. Ein Problem des Cu(In,Ga)S2-Systems besteht heute noch darin, daß die offene Klemmenspannung geringer ausfällt, als dies aufgrund der im Vergleich zu CuInSe2 größeren Bandlücke zu erwarten wäre. Modelle, die dies auf eine ungünstige Bandanpassung an der CdS/Cu(In,Ga)S2-Grenzfläche zurückführen, konnten in dieser Arbeit durch die Messung der Leitungsbandanpassung, die ein deutlich "Cliff"-artiges Verhalte aufweist, bestätigt werden. Untersuchungen des Einflusses unterschiedlicher Oberflächenzusammensetzungen auf die chemischen und elektronischen Eigenschaften der Cu(In,Ga)Se2-Absorberoberfläche ergaben, wie sich die Bandlücke des Absorbers mit wachsender Kupferverarmung vergrößert und gleichzeitig die Bandverbiegung zunimmt. Im letzten, rein grundlagenorientierten Teil dieser Arbeit wurden Röntgenabsorptions- und resonante Röntgenemissionsmessungen an CdS und ZnS im Vergleich zu von A. Fleszar berechneten theoretischen Spektren, die unter Berücksichtigung der Übergangsmatrixelemente aus einer LDA-Bandstruktur berechnet wurden, diskutiert. Es konnten dabei sowohl Anregungen in exzitonische Zustände als auch kohärente Emission mit Informationen über die Bandstruktur gefunden werden. Auch war es möglich, die Lebensdauern verschiedener Valenzlochzustände zu bestimmen. Es zeigt sich, daß so die Bestimmung einer unteren Grenze für die Bandlücke möglich ist, für eine genaue Bestimmung bei den untersuchten Verbindungen jedoch ein Vergleich mit theoretischen Berechnungen notwendig ist.
N2  - In this thesis, thin film solar cells based on Cu(In,Ga)(S,Se)2 - today's most promising thin film solar cell technology - were spectroscopically analyzed in some detail. Until now, good results could be obtained mainly by empirically optimizing the process parameters, but a further optimization calls for a fundamental understanding of the Cu(In,Ga)(S,Se)2 solar cell. Since this device is a multilayer system, a detailed knowledge of the chemical, structural, and electronic properties of its interfaces is required. Partly due to the cost effective production process of the Cu(In,Ga)(S,Se)2 thin film solar cells, their properties are very different from ideal reference systems like single crystals, which makes them a particularly interesting research field. However, this requires the consideration of two aspects: the investigated samples should originate as close as possible from the industrial production process and, when investigating interfaces, their properties have to be measured directly without relying on previously published bulk properties. Both aspects have been achieved in this work. Samples were directly taken from the production process of different collaboration partners, and a direct determination of the conduction and valence band alignments, which are crucial for the carrier transport through the cell device, were conducted by a combination of photoelectron spectroscopy and inverse photoemission. These techniques were ideally complemented by x-ray emission spectroscopy, which can be particular helpful when investigating intermixing processes or the influence of chemical treatments on the chemical and electronic properties of surfaces. In the first part of this thesis, four different interfaces in samples based on the Cu(In,Ga)(S,Se)2 absorber of Shell Solar were investigated. It could be shown, that the intermixing of sulfur and selenium at the CdS/Cu(In,Ga)(S,Se)2 interface found in earlier measurements is dependent on the sulfur content at the absorber surface. Next, the interface between the CdS buffer layer and the i-ZnO part of the window layer was investigated. For this interface, an intermixing can be excluded and a flat conduction band offset is found. By suitably removing the absorber from the back contact, it was possible to investigate the interface between the absorber and the Mo back contact with spectroscopic techniques giving insight into the chemical properties of this interface. The chemical treatment of the absorber by an ammonia-based Cd-solution was investigated for a better understanding of its beneficial impact on the cell performance. Apart from a cleaning of the absorber, the main finding was the formation of a very thin CdS/CdSe layer and, for high Cd-concentrations, of an additional Cd(OH)2 layer on the absorber surface. The investigated Cd-treatment significantly improves the performance of cells with a Zn(O,OH) buffer layer deposited with ILGAR ("Ion Layer Gas Reaction"). The band alignment at the interface between ILGAR Zn(O,OH) and the absorber was investigated with Cd-treated and untreated absorbers. In the second part of this thesis, measurements of thin film solar cells with selenium-free Cu(In,Ga)S2 absorbers are discussed. These absorbers have a larger band gap than CuInSe2, which gives them the potential of higher efficiencies. However, the gain in the open circuit voltage is smaller than expected raising one of the most important questions in the CIGSSe community. In this thesis, this question is answered by a model, that ascribes this behavior to an unfavorable band alignment at the CdS/Cu(In,Ga)S2 interface. The model is supported by the measurement of the band alignment showing a pronounced "cliff" in the conduction band. The investigation of the influence of different absorber surface compositions on the chemical and electronic properties of the Cu(In,Ga)Se2 surface shows, that the surface band gap is increased by increasing copper depletion. These measurements are an important contribution to the understanding of the different recombination behaviors and efficiencies of cells with copper-rich and copper-poor absorbers. In the last part of this thesis, x-ray absorption and resonant x-ray emission spectra of CdS and ZnS (i.e. the currently preferred buffer material (CdS) as well as one of its most promising alternatives (ZnS) for Cu(In,Ga)(S,Se)2 solar cells) were discussed and compared to calculations of A. Fleszar. In these calculations theoretical spectra were obtained ad hoc using an LDA band structure taking the transition matrix elements into account. Thereby valuable information about the band structure could be extracted from the coherent emission in the resonant spectra. Moreover lifetimes of different valence hole states were determined with the surprising observation of an 1.5 eV lifetime broadening of the S 3s deep valence hole.
KW  - Dünnschichtsolarzelle
KW  - Oberfläche
KW  - Elektronische Eigenschaft
KW  - Grenzfläche
KW  - Oberflächenchemie
KW  - Grenzflächenchemie
KW  - Photoelektronenspektroskopie
KW  - Röntgenemission
KW  - Inverse Photoemission
KW  - Solarzellen
KW  - Halbleitergrenzflächen
KW  - photoelectron spectrscopy
KW  - x-ray emission
KW  - inverse photoemission
KW  - solar cells
KW  - semiconductor interfaces
Y1  - 2005
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-16234
ER  - 
TY  - JOUR
A1  - Kraus, Hannes
A1  - Heiber, Michael C.
A1  - Väth, Stefan
A1  - Kern, Julia
A1  - Deibel, Carsten
A1  - Sperlich, Andreas
A1  - Dyakonov, Vladimir
T1  - Analysis of Triplet Exciton Loss Pathways in PTB7:PC\(_{71}\)BM Bulk Heterojunction Solar Cells
JF  - Scientific Reports
N2  - A strategy for increasing the conversion efficiency of organic photovoltaics has been to increase the VOC by tuning the energy levels of donor and acceptor components. However, this opens up a new loss pathway from an interfacial charge transfer state to a triplet exciton (TE) state called electron back transfer (EBT), which is detrimental to device performance. To test this hypothesis, we study triplet formation in the high performing PTB7:PC\(_{71}\)BM blend system and determine the impact of the morphology-optimizing additive 1,8-diiodoctane (DIO). Using photoluminescence and spin-sensitive optically detected magnetic resonance (ODMR) measurements at low temperature, we find that TEs form on PC\(_{71}\)BM via intersystem crossing from singlet excitons and on PTB7 via EBT mechanism. For DIO blends with smaller fullerene domains, an increased density of PTB7 TEs is observed. The EBT process is found to be significant only at very low temperature. At 300 K, no triplets are detected via ODMR, and electrically detected magnetic resonance on optimized solar cells indicates that TEs are only present on the fullerenes. We conclude that in PTB7:PC\(_{71}\)BM devices, TE formation via EBT is impacted by fullerene domain size at low temperature, but at room temperature, EBT does not represent a dominant loss pathway.
KW  - solar cells
KW  - electronic properties and materials
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-147413
VL  - 6
IS  - 29158
ER  -