TY  - JOUR
A1  - Rothmayr, Florian
A1  - Guarin Castro, Edgar David
A1  - Hartmann, Fabian
A1  - Knebl, Georg
A1  - Schade, Anne
A1  - Höfling, Sven
A1  - Koeth, Johannes
A1  - Pfenning, Andreas
A1  - Worschech, Lukas
A1  - Lopez-Richard, Victor
T1  - Resonant tunneling diodes: mid-infrared sensing at room temperature
JF  - Nanomaterials
N2  - Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities.
KW  - resonant tunneling diode
KW  - mid-infrared sensing
KW  - photosensor
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-267152
SN  - 2079-4991
VL  - 12
IS  - 6
ER  -