TY - JOUR A1 - Reusch, Wolfgang A1 - Grimmer, Th. A1 - Heuer, D. T1 - Magnetfeld längs der Achse von Kreisströmen - Messung und Modellierungen mit Animation N2 - No abstract available Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30611 ER - TY - JOUR A1 - Rösch, M. A1 - Atzmüller, R. A1 - Schaack, G. A1 - Becker, Charles R. T1 - Resonant Raman scattering in a zero-gap semiconductor: Interference effects and deformation potentials at the E\(_1\) and E\(_1\) + \(\Delta_1\) gaps of HgTe N2 - No abstract available Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38062 ER - TY - JOUR A1 - Zhang, X. F. A1 - Becker, Charles R. A1 - Zhang, H. A1 - He, L. A1 - Landwehr, G. T1 - Investigation of a short period (001) HgTe-Hg\(_{0.6}\)Cd\(_{0.4}\)Te superlattice by transmission electron microscopy N2 - No abstract available Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38029 ER - TY - JOUR A1 - Einfeldt, S. A1 - Heinke, H. A1 - Behringer, M. A1 - Becker, Charles R. A1 - Kurtz, E. A1 - Hommel, D. A1 - Landwehr, G. T1 - The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe N2 - The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures. Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38001 ER - TY - JOUR A1 - Schikora, D. A1 - Hausleitner, H. A1 - Einfeldt, S. A1 - Becker, Charles R. A1 - Widmer, T. A1 - Giftige, C. A1 - Lischka, K. A1 - von Ortenburg, M. A1 - Landwehr, G. T1 - Epitaxial overgrowth of II-VI compounds on patterned substrates N2 - The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes. Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37985 ER - TY - JOUR A1 - Tönnies, D. A1 - Bacher, G. A1 - Forchel, Alfred A1 - Waag, A. A1 - Litz, Th. A1 - Hommel, D. A1 - Becker, Charles R. A1 - Landwehr, G. A1 - Heuken, M. A1 - Scholl, M. T1 - Optical study of interdiffusion in CdTe and ZnSe based quantum wells N2 - No abstract available Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37750 ER - TY - CHAP A1 - Boege, P. A1 - Schäfer, H. A1 - Shanjia, Xu A1 - Xinzhang, Wu A1 - Einfeldt, S. A1 - Becker, Charles R. A1 - Hommel, D. A1 - Geick, R. T1 - Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method N2 - Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers. KW - Millimeterwelle KW - Kongreß KW - San Diego Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37763 ER - TY - JOUR A1 - Xu, Shanjia A1 - Sheng, Xinqing A1 - Greiner, P. A1 - Becker, Charles R. A1 - Geick, R. T1 - High-order finite-element analysis of scattering properties of II-VI semiconductor materials N2 - The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified. KW - Halbleiter KW - II-VI semiconductor KW - scattering characteristics KW - high-order finite element KW - mode matching method Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-86283 ER -