TY  - JOUR
A1  - Kotz, Frederik
A1  - Risch, Patrick
A1  - Arnold, Karl
A1  - Sevim, Semih
A1  - Puigmartí-Luis, Josep
A1  - Quick, Alexander
A1  - Thiel, Michael
A1  - Hrynevich, Andrei
A1  - Dalton, Paul D.
A1  - Helmer, Dorothea
A1  - Rapp, Bastian E.
T1  - Fabrication of arbitrary three-dimensional suspended hollow microstructures in transparent fused silica glass
JF  - Nature Communications
N2  - Fused silica glass is the preferred material for applications which require long-term chemical and mechanical stability as well as excellent optical properties. The manufacturing of complex hollow microstructures within transparent fused silica glass is of particular interest for, among others, the miniaturization of chemical synthesis towards more versatile, configurable and environmentally friendly flow-through chemistry as well as high-quality optical waveguides or capillaries. However, microstructuring of such complex three-dimensional structures in glass has proven evasive due to its high thermal and chemical stability as well as mechanical hardness. Here we present an approach for the generation of hollow microstructures in fused silica glass with high precision and freedom of three-dimensional designs. The process combines the concept of sacrificial template replication with a room-temperature molding process for fused silica glass. The fabricated glass chips are versatile tools for, among other, the advance of miniaturization in chemical synthesis on chip.
KW  - chemical engineering
KW  - fluidics
KW  - materials for optics
Y1  - 2019
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-224787
VL  - 10
ER  - 
TY  - JOUR
A1  - Suchomel, H.
A1  - Brodbeck, S.
A1  - Liew, T. C. H.
A1  - Amthor, M.
A1  - Klaas, M.
A1  - Klembt, S.
A1  - Kamp, M.
A1  - Höfling, S.
A1  - Schneider, C.
T1  - Prototype of a bistable polariton field-effect transistor switch
JF  - Scientific Reports
N2  - Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigurable potential landscapes for electro-optical polariton-lattice based quantum simulators as well as building blocks of optical logic architectures. Especially for the latter, the strongly interacting nature of the light-matter hybrid particles has been used to facilitate fast and efficient switching of light by light, something which is very hard to achieve with weakly interacting photons. We demonstrate here that polariton transistor switches can be fully integrated in electro-optical schemes by implementing a one-dimensional polariton channel which is operated by an electrical gate rather than by a control laser beam. The operation of the device, which is the polariton equivalent to a field-effect transistor, relies on combining electro-optical potential landscape engineering with local exciton ionization to control the scattering dynamics underneath the gate. We furthermore demonstrate that our device has a region of negative differential resistance and features a completely new way to create bistable behavior.
KW  - materials for optics
KW  - nanoscience and technology
KW  - optics and photonics
KW  - semiconductors
Y1  - 2017
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-158323
VL  - 7
IS  - 5114
ER  - 
TY  - JOUR
A1  - Arca, Francesco
A1  - Tedde, Sandro F.
A1  - Sramek, Maria
A1  - Rauh, Julia
A1  - Lugli, Paolo
A1  - Hayden, Oliver
T1  - Interface Trap States in Organic Photodiodes
JF  - Scientific Reports
N2  - Organic semiconductors are attractive for optical sensing applications due to the effortless processing on large active area of several \(cm^2\), which is difficult to achieve with solid-state devices. However, compared to silicon photodiodes, sensitivity and dynamic behavior remain a major challenge with organic sensors. Here, we show that charge trapping phenomena deteriorate the bandwidth of organic photodiodes (OPDs) to a few Hz at low-light levels. We demonstrate that, despite the large OPD capacitances of similar to 10 nF \(cm^{-2}\), a frequency response in the kHz regime can be achieved at light levels as low as 20 nW \(cm^{-2}\) by appropriate interface engineering, which corresponds to a 1000-fold increase compared to state-of-the-art OPDs. Such device characteristics indicate that large active area OPDs are suitable for industrial sensing and even match medical requirements for single X-ray pulse detection in the millisecond range.
KW  - ultrafast photonics
KW  - materials for optics
KW  - electrical and electronic engineering
KW  - polymers
Y1  - 2013
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-131507
VL  - 3
ER  -