TY  - THES
A1  - Hajer, Jan
T1  - Mercury Telluride Nanowires for Topological Quantum Transport
T1  - Quecksilbertellurid-Nanodrähte für Quantentransport-Untersuchungen
N2  - Novel appraches to the molecular beam epitaxy of core-shell nanowires in the group II telluride material system were explored in this work. Significant advances in growth spurred the development of a flexible and reliable platform for a charge transport characterization of the topological insulator HgTe in a tubular nanowire geometry. The transport results presented provide an important basis for the design of future studies that strive for the experimental realization of topological charge transport in the quantum wire limit.
N2  - Die vorliegende Arbeit befasst sich mit der Herstellung und Charakterisierung von Nanodraht-Heterostrukturen, die den Topologischen Isolator HgTe enthalten. Bedeutende Fortschritte bei der Probenherstellung ermöglichten die Entwicklung einer flexiblen und zuverlässigen Plattform für Ladungstransportuntersuchungen. Die Ergebnisse dieser Transportuntersuchung bieten eine wichtige Grundlage für die Planung zukünftiger Studien, die den experimentellen Nachweis von topologischem Ladungstransport in quasi-eindimensionalen HgTe-Nanostrukturen zum Ziel haben.
KW  - Quecksilbertellurid
KW  - Nanodraht
KW  - Halbleiter-Supraleiter-Kontakt
KW  - Topologischer Isolator
KW  - Core-shell
KW  - Nanowires
KW  - Vapor-liquid-solid
KW  - Molecular beam epitaxy
KW  - HgTe
KW  - CdTe
KW  - ZnTe
KW  - Aharonov-Bohm
KW  - Shapiro
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-293222
ER  - 
TY  - JOUR
A1  - Fornari, C. I.
A1  - Rappl, P. H. O.
A1  - Morelhao, S. L.
A1  - Peixoto, T. R. F.
A1  - Bentmann, H.
A1  - Reinert, F.
A1  - Abramof, E.
T1  - Preservation of pristine Bi\(_2\)Te\(_3\) thin film topological insulator surface after ex situ mechanical removal of Te capping layer
JF  - APL Materials
N2  - Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method was applied to Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily to other methods, this technique does not require any sputtering or thermal annealing setups installed inside the analyzing system and preserves both film thickness and surface characteristics. These results suggest that the technique presented here can be expanded to other topological insulator materials.
KW  - Insulator surfaces
KW  - Atomic force microscopy
KW  - Insulating thin films
KW  - Molecular beam epitaxy
KW  - Surface states
KW  - Vacuum chambers
KW  - Thin film growth
KW  - Sputter deposition
KW  - Epitaxy
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-164468
VL  - 4
ER  -