TY  - JOUR
A1  - Gottscholl, Andreas
A1  - Diez, Matthias
A1  - Soltamov, Victor
A1  - Kasper, Christian
A1  - Krauße, Dominik
A1  - Sperlich, Andreas
A1  - Kianinia, Mehran
A1  - Bradac, Carlo
A1  - Aharonovich, Igor
A1  - Dyakonov, Vladimir
T1  - Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors
JF  - Nature Communications
N2  - Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V\(_B\)\(^−\)) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the V\(_B\)\(^−\). Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials.
KW  - electronic properties and materials
KW  - qubits
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-261581
VL  - 12
IS  - 1
ER  -