TY - JOUR A1 - Waag, A. A1 - Heinke, H. A1 - Scholl, S. A1 - Becker, Charles R. A1 - Landwehr, G. T1 - Growth of MgTe and Cd\(_{1-x}\)Mg\(_x\)Te thin films by molecular beam epitaxy N2 - We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range. Y1 - 1993 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37917 ER - TY - JOUR A1 - Shanjia, Xu A1 - Xinzhang, Wu A1 - Greiner, P. A1 - Becker, Charles R. A1 - Geick, R. T1 - Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide N2 - The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer. Y1 - 1992 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37958 ER - TY - JOUR A1 - Shanjia, Xu A1 - Xinzhang, Wu A1 - Boege, P. A1 - Schäfer, H. A1 - Becker, Charles R. A1 - Geick, R. T1 - Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps N2 - No abstract available Y1 - 1993 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37964 ER - TY - JOUR A1 - He, L. A1 - Becker, Charles R. A1 - Bicknell-Tassius, R. N. A1 - Scholl, S. A1 - Landwehr, G. T1 - Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped (100) Hg\(_{0.8}\)Cd\(_{0.2}\)Te on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te N2 - No abstract available. Y1 - 1993 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37885 ER - TY - JOUR A1 - Schikora, D. A1 - Hausleitner, H. A1 - Einfeldt, S. A1 - Becker, Charles R. A1 - Widmer, T. A1 - Giftige, C. A1 - Lischka, K. A1 - von Ortenburg, M. A1 - Landwehr, G. T1 - Epitaxial overgrowth of II-VI compounds on patterned substrates N2 - The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes. Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37985 ER - TY - JOUR A1 - Einfeldt, S. A1 - Heinke, H. A1 - Behringer, M. A1 - Becker, Charles R. A1 - Kurtz, E. A1 - Hommel, D. A1 - Landwehr, G. T1 - The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe N2 - The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures. Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38001 ER - TY - JOUR A1 - Wu, Y. S. A1 - Becker, Charles R. A1 - Waag, A. A1 - Bicknell-Tassius, R. N. A1 - Landwehr, G. T1 - Removal of oxygen and reduction of carbon contamination on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te N2 - No abstract available Y1 - 1993 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38014 ER - TY - JOUR A1 - Zhang, X. F. A1 - Becker, Charles R. A1 - Zhang, H. A1 - He, L. A1 - Landwehr, G. T1 - Investigation of a short period (001) HgTe-Hg\(_{0.6}\)Cd\(_{0.4}\)Te superlattice by transmission electron microscopy N2 - No abstract available Y1 - 1994 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38029 ER - TY - JOUR A1 - Becker, Charles R. A1 - Martin, T. P. T1 - Infrared absorption by Impurity-pair resonant modes in NaCl:F N2 - New resonant-mode infrared absorption lines have been observed in NaCl with high concentrations of fluorine impurities. The quadratic concentration dependence of the strength of these lines indicates that they are due to pairs of fluorine impurities. At the resonant frequencies, the motion of some host ions appears to be as important as the motion of the impurities themselves. KW - Festkörperphysik Y1 - 1972 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37840 SN - 1098-0121 ER - TY - JOUR A1 - Becker, Charles R. A1 - Nath, G. T1 - Optical properties of LiIO\(_3\) in the far infrared N2 - No abstract available Y1 - 1970 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37905 ER - TY - JOUR A1 - Tacke, M. A1 - Schuberth, W. A1 - Becker, Charles R. A1 - Haas, L. D. T1 - The dielectric constant of PbTe at 4.2 K and \(\tilde ν\)=84.15 cm\(^{-1}\), 96.97 cm\(^{-1}\), 103.60 cm\(^{-1}\) N2 - The dielectric constant of a PbTe epitaxial layer has been measured by surface wave spectroscopy using an optically pumped far-infrared laser and the technique of attenuated total reflection. Y1 - 1982 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30821 ER - TY - JOUR A1 - Geis, G. A1 - Geick, R. A1 - Becker, Charles R. A1 - Wagner, V. T1 - Antiferromagnetic resonance in CoO/NiO mixed crystals N2 - We have studied the lowest magnetic excitation of Ni\(_{1-x}\)Co\(_x\)O mixed crystals for 0.94 \(\leq\) x \(\leq\) 1. Together with previous results for 0.02 \(\leq\) x \(\leq\) 0.07 and neutron data for x = 0.14 and x = 0.30, the results are discussed by means of a model, especially the variation of AFMR frequency and preferred spin direction with Co concentration x. Y1 - 1977 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-31239 ER - TY - JOUR A1 - Becker, Charles R. T1 - Impurity-induced absorption in or near the phonon gap of KI N2 - In or near the phonon gap of KI a single weak line due to OW (OD\(^-\)) at 69.7 (69.3) cm\(^{-1}\) has been observed. A second and much stronger line at 94.1 cm\(^{-1}\) was shown not to be related to OH\(^-\), but instead is thought to be due to CO\(_3\). Y1 - 1970 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30757 ER - TY - JOUR A1 - Köhler, H. A1 - Becker, Charles R. T1 - Optically active lattice vibrations in Bi\(_2\)Se\(_3\) N2 - The preparation of Bi2Sea single crystals with low free carrier densities allowed an investigation of the lattice vibrations to be carried out from the reflectivity of cleavage planes at nearly normal incidence of the radiation (E ~ c). The experimental results ean be explained with two classical oscillators, whose eigenfrequencies oceur at 92 and 69.5 cm-I. The static dielectric constant was determined to be 100 ± 10 for E ~ c. N2 - Die Praparation von Bi2Se3-Einkristallen mit niedriger Konzentration freier Ladungstrager erlaubte die Untersllchung der Gitterschwingungcn aus dem Reflexionsvermogen von Spaltflaclwn bci nahezu senkreehter Inzidenz der Stmhlung (E ~ c). Die .:\'IeBergebnisse konnen mit zwei klassischen Dispersionsoszillatoren erklart werden, deren Eigenfrequenzen bei 92 und 69,5 cm- I liegen. Dic st,atische Dielektrizitatskonstante wurde zu 100 ± 10 für E ~ c bestimmt. Y1 - 1974 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-31296 ER - TY - JOUR A1 - Klitzing, K. von A1 - Becker, Charles R. T1 - Far infrared photoconductivity of residual acceptors in pure tellurium N2 - The photoconductivity of both undeformed and deformed Te samples has been investigated at liquid He temperature by means of a Fourier spectrometer. Three peaks were usually found in the spectra of undeformed samples at 11, 24 and 46 cm\(^{-1}\). These are shown to be due to three different chemical impurities. The deformed samples are characterized by additional structure at higher frequencies. Y1 - 1976 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-31278 ER - TY - JOUR A1 - Becker, Charles R. T1 - Evidence for a quasi-phonon gap in CsCl N2 - The observed impurity induced far-infrared absorption in CsCl : Rb\(^+\) and CsCl : K\(^+\) is compared with a calculated density of acoustic phonon states in CsCl. The absorption due to CsCl : Rb\(^+\) displays a minimum between the acoustic and optic phonon bands. A narrow line is observed in CsCl: K\(^+\) at 85.8 cm\(^{-1}\) which falls in this quasi-phonon gap. Y1 - 1971 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30767 ER - TY - JOUR A1 - Schubert, D.W. A1 - Kraus, M.M A1 - Kenklies, R. A1 - Becker, Charles R. A1 - Bicknell-Tassius, R.N. T1 - Composition and wavelength dependence of the refractive index in Cd\(_{1-x}\)Mn\(_x\)Te epitaxial layers N2 - We have investigated Cd\(_{1-x}\)Mn\(_x\)Te thin films with Mn concentrations of x=0.12, 0.18, 0.30, 0.52, and 0.70. These single crystal layers were grown by molecular beam epitaxy on [001] CdTe substrates. The real part of the refractive index, n, was determined below the band-gap Eo in the range of 0.5-2.5 eV at T=300 K. The parallel reOectivity was measured near the Brewster angle at the YAG laser wavelength of 1.064 J.Lm (hv= 1.165 eV). Combining these results with the optical pathlength results (nd) of reOection measurements in a Fourier spectrometer we have determined n(x,v) over a wide spectral range by utilizing a three parameter fit. The accuracy of these results for n should improve waveguide designs based on this material. Y1 - 1992 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37716 ER - TY - JOUR A1 - Wu, Y. S. A1 - Becker, Charles R. A1 - Waag, A. A1 - Bicknell-Tassius, R. N. A1 - Landwehr, G. T1 - The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTe N2 - We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from ( 100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase. Y1 - 1991 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30795 ER - TY - JOUR A1 - Becker, Charles R. A1 - Wu, Y. S. A1 - Waag, A. A1 - Kraus, M. M. A1 - Landwehr, G. T1 - The orientation independence of the CdTe-HgTe valence band offset as determined by x-ray photoelectron spectroscopy N2 - No abstract available Y1 - 1991 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30784 ER - TY - JOUR A1 - Becker, Charles R. A1 - Lau, Ph. A1 - GEICK, R. A1 - Wagner, V. T1 - Antiferromagnetic Resonance in NiO:Co\(^{2+}\) and NiO:Fe\(^{2+}\) N2 - No abstract available. Y1 - 1975 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30772 ER -