TY  - JOUR
A1  - Wyborski, Paweł
A1  - Musiał, Anna
A1  - Mrowiński, Paweł
A1  - Podemski, Paweł
A1  - Baumann, Vasilij
A1  - Wroński, Piotr
A1  - Jabeen, Fauzia
A1  - Höfling, Sven
A1  - Sęk, Grzegorz
T1  - InP-substrate-based quantum dashes on a DBR as single-photon emitters at the third telecommunication window
JF  - Materials
N2  - We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.
KW  - single-photon emitter
KW  - III–V quantum dot
KW  - telecommunication spectral range
KW  - photonic structure
KW  - extraction efficiency
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-228773
SN  - 1996-1944
VL  - 14
IS  - 4
ER  - 
TY  - JOUR
A1  - Wroński, Piotr Andrzej
A1  - Wyborski, Paweł
A1  - Musiał, Anna
A1  - Podemski, Paweł
A1  - Sęk, Grzegorz
A1  - Höfling, Sven
A1  - Jabeen, Fauzia
T1  - Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
JF  - Materials
N2  - We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.
KW  - single-photon source
KW  - quantum dots
KW  - telecommunication spectral range
KW  - metamorphic buffer layer
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-246145
SN  - 1996-1944
VL  - 14
IS  - 18
ER  -