TY  - JOUR
A1  - Müller, S.
A1  - Spriestersbach, F.
A1  - Min, C.-H.
A1  - Fornari, C. I.
A1  - Reinert, F.
T1  - Molecular beam epitaxy of TmTe thin films on SrF\(_{2}\) (111)
JF  - AIP Advances
N2  - The odd parity nature of 4f states characterized by strong spin–orbit coupling and electronic correlations has led to a search for novel topological phases among rare earth compounds, such as Kondo systems, heavy Fermions, and homogeneous mixed-valent materials. Our target system is thulium telluride thin films whose bandgap is expected to be tuned as a function of lattice parameter. We systematically investigate the growth conditions of TmxTey thin films on SrF\(_{2}\) (111) substrates by molecular beam epitaxy. The ratio between Te and Tm supply was precisely tuned, resulting in two different crystalline phases, which were confirmed by x-ray diffraction and x-ray photoemission spectroscopy. By investigating the crystalline quality as a function of the substrate temperature, the optimal growth conditions were identified for the desired Tm1Te1 phase. Additional low energy electron diffraction and reflective high energy electron diffraction measurements confirm the epitaxial growth of TmTe layers. X-ray reflectivity measurements demonstrate that homogeneous samples with sharp interfaces can be obtained for varied thicknesses. Our results provide a reliable guidance to prepare homogeneous high-quality TmTe thin films and thus serve as a basis for further electronic investigations.
KW  - thulium telluride
KW  - molecular beam epitaxy
KW  - thin films
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-300876
VL  - 12
IS  - 2
ER  - 
TY  - JOUR
A1  - Wyborski, Paweł
A1  - Podemski, Paweł
A1  - Wroński, Piotr Andrzej
A1  - Jabeen, Fauzia
A1  - Höfling, Sven
A1  - Sęk, Grzegorz
T1  - Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
JF  - Materials
N2  - We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.
KW  - molecular beam epitaxy
KW  - quantum dot
KW  - metamorphic buffer layer
KW  - band structure
KW  - photoluminescence
KW  - photoreflectance
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-297037
SN  - 1996-1944
VL  - 15
IS  - 3
ER  -