TY - JOUR A1 - Fiedler, Sebastian A1 - El-Kareh, Lydia A1 - Eremeev, Sergey V. A1 - Tereshchenko, Oleg E. A1 - Seibel, Christoph A1 - Lutz, Peter A1 - Kokh, Konstantin A. A1 - Chulkov, Evgueni V. A1 - Kuznetsova, Tatyana V. A1 - Grebennikov, Vladimir I. A1 - Bentmann, Hendrik A1 - Bode, Matthias A1 - Reinert, Friedrich T1 - Defect and structural imperfection effects on the electronic properties of BiTeI surfaces JF - New Journal of Physics N2 - The surface electronic structure of the narrow-gap seminconductor BiTeI exhibits a large Rashba-splitting which strongly depends on the surface termination. Here we report on a detailed investigation of the surface morphology and electronic properties of cleaved BiTeI single crystals by scanning tunneling microscopy, photoelectron spectroscopy (ARPES, XPS), electron diffraction (SPA-LEED) and density functional theory calculations. Our measurements confirm a previously reported coexistence of Te- and I-terminated surface areas originating from bulk stacking faults and find a characteristic length scale of ~100 nm for these areas. We show that the two terminations exhibit distinct types of atomic defects in the surface and subsurface layers. For electronic states resided on the I terminations we observe an energy shift depending on the time after cleavage. This aging effect is successfully mimicked by depositon of Cs adatoms found to accumulate on top of the I terminations. As shown theoretically on a microscopic scale, this preferential adsorbing behaviour results from considerably different energetics and surface diffusion lengths at the two terminations. Our investigations provide insight into the importance of structural imperfections as well as intrinsic and extrinsic defects on the electronic properties of BiTeI surfaces and their temporal stability. KW - electronic structure KW - spin–orbit coupling KW - surface morphology KW - semiconductor surfaces Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-119467 SN - 1367-2630 VL - 16 IS - 075013 ER - TY - JOUR A1 - Bentmann, Hendrik A1 - Reinert, Friedrich T1 - Enhancing and reducing the Rashba-splitting at surfaces by adsorbates: Na and Xe on Bi/Cu(111) JF - New Journal of Physics N2 - The surface alloy Bi/Cu(111) shows a paradigmatic free-electron-like surface state with a very large Rashba-type spin–orbit splitting. Using angle-resolved photoemission we investigate how adsorbates of different chemical nature influence the size of the spin splitting in this system. We find that the adsorption of small amounts of monovalent Na atoms leads to an enhancement of the spin splitting while an overlayer of the closed-shell rare gas Xe causes a reduction. The latter result is in contrast to the Au(111) surface for which an increased splitting size after Xe-adsorption was observed. We discuss these experimental findings in terms of the characteristic differences of the surface state wave functions and their spatial deformation in the presence of different types of adsorbates. Our results provide insight into the complex interplay of atomic and interface potential gradients governing the Rashba effect. KW - Rashba-Splitting Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-129722 VL - 15 IS - 115011 ER - TY - JOUR A1 - El-Kareh, Lydia A1 - Bihlmayer, Gustav A1 - Buchter, Arne A1 - Bentmann, Hendrik A1 - Blügel, Stefan A1 - Reinert, Friedrich A1 - Bode, Matthias T1 - A combined experimental and theoretical study of Rashba-split surface states on the ( √3x√3) Pb/Ag (111)R30° surface N2 - We report on a combined low-temperature scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) investigation of the ( √3x√3) Pb/Ag (111)R30° surface alloy which provides a giant Rashba-type spin splitting. With STS we observed spectroscopic features that are assigned to two hole-like Rashba-split bands in the unoccupied energy range. By means of STS and quantum interference mapping we determine the band onsets, splitting strengths, and dispersions for both bands. The unambiguous assignment of scattering vectors is achieved by comparison to ARPES measurements. While intra-band scattering is found for both Rashba bands, inter-band scattering is only observed in the occupied energy range. Spin- and orbitally-resolved band structures were obtained by DFT calculations. Considering the scattering between states of different spin- and orbital character, the apparent deviation between experimentally observed scattering events and the theoretically predicted spin polarization could be resolved. KW - Rashba effect KW - spin–orbit coupling KW - scanning tunneling microscopy KW - angle resolved photo emission spectroscopy KW - density functional theory Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-112786 ER - TY - THES A1 - Bentmann, Hendrik T1 - Spin-Bahn-Kopplung in Grenzschichten: Mikroskopische Zusammenhänge und Strategien zur Manipulation T1 - Spin-Orbit-Coupling at Interfaces: Microscopic Mechanisms and Strategies for Manipulation N2 - Die vorliegende Arbeit befasst sich mit dem Einfluss der Spin-Bahn-Kopplung (SBK) auf die zweidimensionale elektronische Struktur von Festkörperoberflächen und -grenzflächen. Aufgrund der strukturellen Inversionsasymmetrie kann die SBK in derartigen Systemen eine Spinaufspaltung der elektronischen Zustände herbeiführen und eine charakteristische impulsabhängige Spinstruktur induzieren (Rashba-Effekt). Die Studien in dieser Arbeit sind zum einen darauf gerichtet, das physikalische Verständnis der mikroskopischen Zusammenhänge, die die Spinaufspaltung und die Spinorientierung elektronischer Zustände an Grenzflächen bestimmen, zu verbessern. Des Weiteren sollen Möglichkeiten zur Manipulation der SBK durch kontrollierte Variationen chemischer und struktureller Grenzflächenparameter erforscht werden. Als Modellsysteme für diese Fragestellungen dienen die isostrukturellen Oberflächenlegierungen BiCu2 und BiAg2, deren elektronische Struktur mittels winkelaufgelöster Photoelektronenspektroskopie (ARPES) und spinaufgelöster ARPES untersucht wird. Die Resultate der Experimente werden mithilfe von ab initio-Rechnungen und einfacheren Modellbetrachtungen interpretiert. Die Arbeit schließt mit einer ausblickenden Präsentation von Experimenten zu dem topologischen Isolator Bi2Se3(0001). Vergleichende ARPES-Messungen zu BiAg2/Ag(111) und BiCu2/Cu(111) zeigen, dass bereits geringe Unterschiede in der Grenzschichtmorphologie die Größe der Spinaufspaltung in der elektronischen Struktur um ein Vielfaches verändern können. Zudem belegen spinaufgelöste Experimente eine invertierte Spinorientierung der elektronischen Zustände in BiCu2 im Vergleich mit dem Referenzsystem Au(111). Beide Resultate können durch eine theoretische Analyse des Potentialprofils und der elektronischen Ladungsverteilung senkrecht zu der Grenzfläche in Kombination mit einfachen Modellbetrachtungen verstanden werden. Es stellt sich heraus, dass Asymmetrien in der Ladungsverteilung das direkte mikroskopische Bindeglied zwischen der Spinstruktur des elektronischen Systems und den strukturellen und chemischen Parametern der Grenzschicht bilden. Weitergehende ARPES-Experimente zeigen, dass die spinabhängige elektronische Struktur zudem signifikant durch die Symmetrie des Potentials parallel zu der Grenzflächenebene beeinflusst wird. Eine Manipulation der SBK wird in BiCu2 durch die Deposition von Adatomen erreicht. Hierdurch gelingt es, die Spinaufspaltung sowohl zu vergrößern (Na-Adsorption) als auch zu verringern (Xe-Adsorption). ARPES-Experimente an dem ternären Schichtsystem BiAg2/Ag/Au(111) belegen erstmalig eine Kopplung zwischen elektronischen Bändern mit entgegengesetztem Spincharakter in einem zweidimensionalen System mit Spinaufspaltung (Interband-Spin-Bahn-Kopplung). Der zugrundeliegende Kopplungsmechanismus steht in bemerkenswerter Analogie zu den Auswirkungen der SBK auf die spinpolarisierte elektronische Struktur in ferromagnetischen Systemen. Variationen in der Schichtdicke des Ag-Substratfilms erlauben es, die Stärke der Interband-SBK zu manipulieren. N2 - This thesis deals with the effects of the spin-orbit coupling (SOC) on the two-dimensional electronic structure of crystal surfaces and interfaces. Due to the structural inversion asymmetry the SOC can provoke a spin splitting of the electronic states in such systems and thereby induce a characteristic momentum-dependent spin structure (Rashba effect). The studies presented in this work are directed towards an improved understanding of the microscopic mechanisms that govern the size of the spin splitting and the spin orientation of two-dimensional electronic states. Furthermore, possibilities to manipulate the SOC via controlled variations of the chemical and structural interface properties shall be investigated. In order to address these issues the spin-dependent electronic structure of the two isostructural surface alloys BiCu2 and BiAg2 is scrutinized by angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES experiments. The experimental results are interpreted using ab initio electronic structure theory as well as more simple free-electron-type models. The thesis closes with a forward-looking presentation of experimental results on the topological insulator surface Bi2Se3(0001). ARPES measurements for BiAg2/Ag(111) and BiCu2/Cu(111) reveal that already small changes in the interface morphology can result in sizeable differences of the spin splitting. Moreover, spin-resolved experiments provide evidence for an inverted spin orientation of the electronic states in BiCu2 when compared to the reference system Au(111). Both results can be understood through a careful theoretical analysis of the potential profile and the electronic charge distribution perpendicular to the interface in combination with simple model considerations. It turns out that asymmetries in the charge distribution represent the central microscopic link between the spin structure of the electronic system and the structural and chemical interface properties. Further ARPES experiments show that the spin-dependent electronic structure is also significantly influenced by the symmetry of the potential parallel to the interface. A manipulation of the SOC is achieved in BiCu2/Cu(111) by the deposition of adatoms. Thereby it is possible both to increase the spin splitting by the adsorption of Na and to decrease it by theadsorption of Xe. ARPES experiments for the ternary layer system BiAg2/Ag/Au(111) show for the first time a coupling between electronic bands of opposite spin character in a spin-orbit split electron system (interband-spin-orbit-coupling). The underlying coupling mechanism shows remarkable analogies with the effect of SOC on the spin-polarized electronic structure in ferromagnetic systems. Variations of the layer thickness of the Ag-film allow for a manipulation of the interband-SOC. KW - Spin-Bahn-Wechselwirkung KW - Grenzflächenphysik KW - Photoemission KW - Spin-orbit coupling KW - Electronic structure KW - Interface physics KW - Elektronenstruktur Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-76963 ER - TY - JOUR A1 - Maaß, Henriette A1 - Bentmann, Hendrik A1 - Seibel, Christoph A1 - Tusche, Christian A1 - Eremeev, Sergey V. A1 - Peixoto, Thiago R.F. A1 - Tereshchenko, Oleg E. A1 - Kokh, Konstantin A. A1 - Chulkov, Evgueni V. A1 - Kirschner, Jürgen A1 - Reinert, Friedrich T1 - Spin-texture inversion in the giant Rashba semiconductor BiTeI JF - Nature Communications N2 - Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin–orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors. KW - applied physics KW - spintronics KW - semiconductors Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-173769 VL - 7 ER - TY - JOUR A1 - Peixoto, Thiago R. F. A1 - Bentmann, Hendrik A1 - Rüßmann, Philipp A1 - Tcakaev, Abdul-Vakhab A1 - Winnerlein, Martin A1 - Schreyeck, Steffen A1 - Schatz, Sonja A1 - Vidal, Raphael Crespo A1 - Stier, Fabian A1 - Zabolotnyy, Volodymyr A1 - Green, Robert J. A1 - Min, Chul Hee A1 - Fornari, Celso I. A1 - Maaß, Henriette A1 - Vasili, Hari Babu A1 - Gargiani, Pierluigi A1 - Valvidares, Manuel A1 - Barla, Alessandro A1 - Buck, Jens A1 - Hoesch, Moritz A1 - Diekmann, Florian A1 - Rohlf, Sebastian A1 - Kalläne, Matthias A1 - Rossnagel, Kai A1 - Gould, Charles A1 - Brunner, Karl A1 - Blügel, Stefan A1 - Hinkov, Vladimir A1 - Molenkamp, Laurens W. A1 - Friedrich, Reinert T1 - Non-local effect of impurity states on the exchange coupling mechanism in magnetic topological insulators JF - NPJ Quantum Materials N2 - Since the discovery of the quantum anomalous Hall (QAH) effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)\(_2\)Te\(_3\) and V:(Bi,Sb)\(_2\)Te\(_3\), the search for the magnetic coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic circular dichroism and density functional theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)\(_2\)Te\(_3\). State-of-the-art first-principles calculations find pronounced differences in their 3d densities of states, and show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results explain, in an unified picture, the origins of the observed magnetic properties, and establish the essential role of impurity-state-mediated exchange interactions in the magnetism of MTI. KW - shape-truncation functions KW - semiconductors Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-230686 VL - 5 ER -