TY  - JOUR
A1  - Dyksik, Mateusz
A1  - Motyka, Marcin
A1  - Sęk, Grzegorz
A1  - Misiewicz, Jan
A1  - Dallner, Matthias
A1  - Weih, Robert
A1  - Kamp, Martin
A1  - Höfling, Sven
T1  - Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range
JF  - Nanoscale Research Letters
N2  - The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
KW  - interband cascade lasers
KW  - fourier transform spectroscopy
KW  - mid-infrared
KW  - type II quantum wells
KW  - spatially resolved photoluminescence
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-139733
VL  - 10
IS  - 402
ER  -