TY  - JOUR
A1  - Einfeldt, S.
A1  - Heinke, H.
A1  - Behringer, M.
A1  - Becker, Charles R.
A1  - Kurtz, E.
A1  - Hommel, D.
A1  - Landwehr, G.
T1  - The growth of HgSe by molecular beam epitaxy for ohmic contacts to p-ZnSe
N2  - The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.
Y1  - 1994
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38001
ER  - 
TY  - JOUR
A1  - Schikora, D.
A1  - Hausleitner, H.
A1  - Einfeldt, S.
A1  - Becker, Charles R.
A1  - Widmer, T.
A1  - Giftige, C.
A1  - Lischka, K.
A1  - von Ortenburg, M.
A1  - Landwehr, G.
T1  - Epitaxial overgrowth of II-VI compounds on patterned substrates
N2  - The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.
Y1  - 1994
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37985
ER  -