TY  - JOUR
A1  - Lee, Eun-Hye
A1  - Song, Jin-Dong
A1  - Han, Il-Ki
A1  - Chang, Soo-Kyung
A1  - Langer, Fabian
A1  - Höfling, Sven
A1  - Forchel, Alfred
A1  - Kamp, Martin
A1  - Kim, Jong-Su
T1  - Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
JF  - Nanoscale Research Letters
N2  - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
KW  - quantum dot
KW  - droplet epitaxy
KW  - micro-photoluminescence
KW  - single photon
KW  - GaAs
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-143692
VL  - 10
IS  - 114
ER  -