TY  - JOUR
A1  - Braun, T.
A1  - Schneider, C.
A1  - Maier, S.
A1  - Igusa, R.
A1  - Iwamoto, S.
A1  - Forchel, A.
A1  - Höfling, S.
A1  - Arakawa, Y.
A1  - Kamp, M.
T1  - Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
JF  - AIP Advances
N2  - In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).
KW  - GAAS
Y1  - 2014
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-115448
SN  - 2158-3226
VL  - 4
IS  - 9
ER  -