TY  - JOUR
A1  - Syperek, M.
A1  - Andrzejewski, J.
A1  - Rudno-Rudziński, W.
A1  - Maryński, A.
A1  - Sȩk, G.
A1  - Misiewicz, J.
A1  - Reithmaier, J. P.
A1  - Somers, A.
A1  - Höfling, S.
T1  - The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems
JF  - Journal of Physics: Conference Series
N2  - The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP.
KW  - quantum mechanical coupling
KW  - quantum well
KW  - semiconductor quantum dot
Y1  - 2017
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-262876
SN  - 1742-6588
SN  - 1742-6596
VL  - 906
IS  - 1
ER  -