TY  - JOUR
A1  - Herrmann, K. H.
A1  - Happ, M.
A1  - Möllmann, K.-P.
A1  - Tomm, J. W.
A1  - Becker, Charles R.
A1  - Kraus, M. M.
A1  - Yuan, S.
A1  - Landwehr, G.
T1  - A new model for the absorption coefficient of narrow gap (Hg,Cd)Te that simultaneously considers band tails and band filling
N2  - A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37894
ER  - 
TY  - JOUR
A1  - Schikora, D.
A1  - Hausleitner, H.
A1  - Einfeldt, S.
A1  - Becker, Charles R.
A1  - Widmer, T.
A1  - Giftige, C.
A1  - Lischka, K.
A1  - von Ortenburg, M.
A1  - Landwehr, G.
T1  - Epitaxial overgrowth of II-VI compounds on patterned substrates
N2  - The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.
Y1  - 1994
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37985
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - von Schierstedt, K.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Surface sublimation of zinc blende CdTe
N2  - The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy. These experiments verify that Te is much easier to evaporate than Cd. The experimental value for the Te activation energy from a Te stabilized (111)A CdTe surface is 1.41 ±0.1O eV, which is apparently inconsistent with recent theoretical results.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37829
ER  -