TY  - JOUR
A1  - Wroński, Piotr Andrzej
A1  - Wyborski, Paweł
A1  - Musiał, Anna
A1  - Podemski, Paweł
A1  - Sęk, Grzegorz
A1  - Höfling, Sven
A1  - Jabeen, Fauzia
T1  - Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
JF  - Materials
N2  - We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.
KW  - single-photon source
KW  - quantum dots
KW  - telecommunication spectral range
KW  - metamorphic buffer layer
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-246145
SN  - 1996-1944
VL  - 14
IS  - 18
ER  -