TY  - JOUR
A1  - Sacépé, Benjamin
A1  - Oostinga, Jeroen B.
A1  - Li, Jian
A1  - Ubaldini, Alberto
A1  - Couto, Nuno J. G.
A1  - Giannini, Enrico
A1  - Morpurgo, Alberto F.
T1  - Gate-tuned normal and superconducting transport at the surface of a topological insulator
JF  - Nature Communications
N2  - Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of the Dirac fermion Landau levels, whose character evolves continuously from electron- to hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned, and is minimum at the charge neutrality point determined from the Landau level filling. Our results demonstrate how gated nano-electronic devices give control over normal and superconducting transport of Dirac fermions at an individual surface of a three-dimensional topological insulators.
KW  - Physical sciences
KW  - Condensed matter
KW  - Materials science
KW  - nanotechnology
Y1  - 2011
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-140175
VL  - 2
ER  -