TY  - JOUR
A1  - Wyborski, Paweł
A1  - Podemski, Paweł
A1  - Wroński, Piotr Andrzej
A1  - Jabeen, Fauzia
A1  - Höfling, Sven
A1  - Sęk, Grzegorz
T1  - Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
JF  - Materials
N2  - We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.
KW  - molecular beam epitaxy
KW  - quantum dot
KW  - metamorphic buffer layer
KW  - band structure
KW  - photoluminescence
KW  - photoreflectance
Y1  - 2022
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-297037
SN  - 1996-1944
VL  - 15
IS  - 3
ER  - 
TY  - JOUR
A1  - Wroński, Piotr Andrzej
A1  - Wyborski, Paweł
A1  - Musiał, Anna
A1  - Podemski, Paweł
A1  - Sęk, Grzegorz
A1  - Höfling, Sven
A1  - Jabeen, Fauzia
T1  - Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
JF  - Materials
N2  - We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.
KW  - single-photon source
KW  - quantum dots
KW  - telecommunication spectral range
KW  - metamorphic buffer layer
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-246145
SN  - 1996-1944
VL  - 14
IS  - 18
ER  -