TY - JOUR
A1 - Xu, Shanjia
A1 - Sheng, Xinqing
A1 - Greiner, P.
A1 - Becker, Charles R.
A1 - Geick, R.
T1 - High-order finite-element analysis of scattering properties of II-VI semiconductor materials
N2 - The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified.
KW - Halbleiter
KW - II-VI semiconductor
KW - scattering characteristics
KW - high-order finite element
KW - mode matching method
Y1 - 1994
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-86283
ER -
TY - JOUR
A1 - Shanjia, Xu
A1 - Xinzhang, Wu
A1 - Greiner, P.
A1 - Becker, Charles R.
A1 - Geick, R.
T1 - Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide
N2 - The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.
Y1 - 1992
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37958
ER -
TY - JOUR
A1 - Shanjia, Xu
A1 - Xinzhang, Wu
A1 - Boege, P.
A1 - Schäfer, H.
A1 - Becker, Charles R.
A1 - Geick, R.
T1 - Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps
N2 - No abstract available
Y1 - 1993
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37964
ER -
TY - JOUR
A1 - Greiner, P.
A1 - Polignone, L.
A1 - Becker, Charles R.
A1 - Geick, R.
T1 - Contactless measurement of the conductivity of II-VI epitaxial layers by means of the partially filled waveguide method
N2 - We report the contactless determination of the conductivity, the mobility and the carrier concentration of II-VI semiconductors by means of the technique of the partially filled waveguide at a microwave frequency of 9 GHz. The samples are CdHgTe epitaxial layers, grown on CdZnTe substrates by molecular beam epitaxy. The conductivity is determined from the transmission coefficient of the sample in the partially filled waveguide. For the analysis of the experimental data, the complex transmission coefficient is calculated by a rigorous multi-mode matching procedure. By varying the conductivity of the sample, we obtain an optimum fit of the calculated data to the experimental results. Comparison with conductivity data determined by the van der Pauw method shows that our method allows to measure the conductivity with good accuracy. The behaviour of the transmission coefficient of the sample is discussed in dependence on the layer conductivity, the layer thickness and the dielectric constant of the substrate. The calculations require to consider in detail the distribution of the electromagnetic fields in the sample region. The usual assumption of a hardly disturbed TE\(_{10}\) mode cannot be used in our case. By applying a magnetic field in extraordinary Voigt configuration. galvanomagnetic measurements have been carried out which yield the mobility and thus the carrier concentration. These results are also in good agreement with van der Pauw transport measurements.
Y1 - 1992
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37838
ER -
TY - JOUR
A1 - Geis, G.
A1 - Geick, R.
A1 - Becker, Charles R.
A1 - Wagner, V.
T1 - Antiferromagnetic resonance in CoO/NiO mixed crystals
N2 - We have studied the lowest magnetic excitation of Ni\(_{1-x}\)Co\(_x\)O mixed crystals for 0.94 \(\leq\) x \(\leq\) 1. Together with previous results for 0.02 \(\leq\) x \(\leq\) 0.07 and neutron data for x = 0.14 and x = 0.30, the results are discussed by means of a model, especially the variation of AFMR frequency and preferred spin direction with Co concentration x.
Y1 - 1977
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-31239
ER -
TY - CHAP
A1 - Boege, P.
A1 - Schäfer, H.
A1 - Shanjia, Xu
A1 - Xinzhang, Wu
A1 - Einfeldt, S.
A1 - Becker, Charles R.
A1 - Hommel, D.
A1 - Geick, R.
T1 - Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method
N2 - Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.
KW - Millimeterwelle
KW - Kongreß
KW - San Diego
Y1 - 1994
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37763
ER -
TY - JOUR
A1 - Becker, Charles R.
A1 - Lau, Ph.
A1 - GEICK, R.
A1 - Wagner, V.
T1 - Antiferromagnetic Resonance in NiO:Co\(^{2+}\) and NiO:Fe\(^{2+}\)
N2 - No abstract available.
Y1 - 1975
U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30772
ER -