TY  - JOUR
A1  - Becker, Charles R.
A1  - He, L.
A1  - Einfeldt, S.
A1  - Wu, Y. S.
A1  - Lérondel, G.
A1  - Heinke, H.
A1  - Oehling, S.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs
N2  - In this paper, we present results on the first MBE growth of HgSe. The influence of the GaAs substrate temperature as well as the Hg and Se fluxes on the growth and the electrical properties has been investigated. It has been found that the growth rate is very low at substrate temperatures above 120°C. At 120°C and at lower temperatures, the growth rate is appreciably higher. The sticking coefficient of Se seems to depend inversely on the Hg/Se flux ratio. Epitaxial growth could be maintained at 70°C with Hg/Se flux ratios between lOO and ISO, and at 160°C between 280 and 450. The electron mobilities of these HgSe epilayers at room temperature decrease from a maximum value of 8.2 x 10^3 cm2 /V' s with increasing electron concentration. The concentration was found to be between 6xlO^17 and 1.6x10^19 cm- 3 at room temperature. Rocking curves from X-ray diffraction measurements of the better epilayers have a full width at half maximum of 5S0 arc sec.
KW  - Physik
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-50947
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Thermal effects on (100) CdZnTe substrates as studied by x-ray photoelectron spectroscopy and reflection high energy electron diffraction
N2  - The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn-Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
Y1  - 1992
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37801
SN  - 0003-6951
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - von Schierstedt, K.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Surface sublimation of zinc blende CdTe
N2  - The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy. These experiments verify that Te is much easier to evaporate than Cd. The experimental value for the Te activation energy from a Te stabilized (111)A CdTe surface is 1.41 ±0.1O eV, which is apparently inconsistent with recent theoretical results.
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37829
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - Removal of oxygen and reduction of carbon contamination on (100) Cd\(_{0.96}\)Zn\(_{0.04}\)Te
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-38014
ER  - 
TY  - JOUR
A1  - Wu, Y. S.
A1  - Becker, Charles R.
A1  - Waag, A.
A1  - Bicknell-Tassius, R. N.
A1  - Landwehr, G.
T1  - The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTe
N2  - We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from ( 100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
Y1  - 1991
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-30795
ER  -