TY  - JOUR
A1  - Shanjia, Xu
A1  - Xinzhang, Wu
A1  - Boege, P.
A1  - Schäfer, H.
A1  - Becker, Charles R.
A1  - Geick, R.
T1  - Scattering characteristics of 3-D discontinuity consisting of semiconductor sample filled in waveguide with gaps
N2  - No abstract available
Y1  - 1993
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37964
ER  - 
TY  - JOUR
A1  - Shanjia, Xu
A1  - Xinzhang, Wu
A1  - Greiner, P.
A1  - Becker, Charles R.
A1  - Geick, R.
T1  - Microwave transmission and reflection of stratified lossy dielectric segments partially filled waveguide
N2  - The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.
Y1  - 1992
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37958
ER  - 
TY  - CHAP
A1  - Boege, P.
A1  - Schäfer, H.
A1  - Shanjia, Xu
A1  - Xinzhang, Wu
A1  - Einfeldt, S.
A1  - Becker, Charles R.
A1  - Hommel, D.
A1  - Geick, R.
T1  - Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method
N2  - Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.
KW  - Millimeterwelle
KW  - Kongreß
KW  - San Diego <Calif.
KW  - 1994>
Y1  - 1994
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-37763
ER  - 
TY  - JOUR
A1  - Xu, Shanjia
A1  - Sheng, Xinqing
A1  - Greiner, P.
A1  - Becker, Charles R.
A1  - Geick, R.
T1  - High-order finite-element analysis of scattering properties of II-VI semiconductor materials
N2  - The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified.
KW  - Halbleiter
KW  - II-VI semiconductor
KW  - scattering characteristics
KW  - high-order finite element
KW  - mode matching method
Y1  - 1994
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-86283
ER  -