TY  - JOUR
A1  - He, Tao
A1  - Stolte, Matthias
A1  - Burschka, Christian
A1  - Hansen, Nis Hauke
A1  - Musiol, Thomas
A1  - Kälblein, Daniel
A1  - Pflaum, Jens
A1  - Tao, Xutang
A1  - Brill, Jochen
A1  - Würthner, Frank
T1  - Single-crystal field-effect transistors of new Cl\(_{2}\)-NDI polymorph processed by sublimation in air
JF  - Nature Communications
N2  - Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-film transistors by sublimation of 2,6-dichloro-naphthalene diimide in air. Under these conditions, a new polymorph with two-dimensional brick-wall packing mode (\(\beta\)-phase) is obtained that is distinguished from the previously reported herringbone packing motif obtained from solution (\(\alpha\)-phase). We are able to fabricate single-crystal field-effect transistors with electron mobilities in air of up to 8.6 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\alpha\)-phase) and up to 3.5 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\) (\(\beta\)-phase) on n-octadecyltriethoxysilane-modified substrates. On silicon dioxide, thin-film devices based on \(\beta\)-phase can be manufactured in air giving rise to electron mobilities of 0.37 cm\(^{2}\)V\(^{-1}\)s\(^{-1}\). The simple crystal and thin-film growth procedures by sublimation under ambient conditions avoid elaborate substrate modifications and costly vacuum equipment-based fabrication steps.
KW  - thin-film transistors
KW  - carrier transport
KW  - \(\beta\)-phase
KW  - organic semiconductors
KW  - induced phase transition
KW  - charge transport
KW  - materials design
KW  - \(\alpha\)-phase
KW  - mobility
KW  - pentacene
Y1  - 2015
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-149255
VL  - 6
IS  - 5954
ER  - 
TY  - JOUR
A1  - He, Tao
A1  - Wu, Yanfei
A1  - D'Avino, Gabriele
A1  - Schmidt, Elliot
A1  - Stolte, Matthias
A1  - Cornil, Jérôme
A1  - Beljonne, David
A1  - Ruden, P. Paul
A1  - Würthner, Frank
A1  - Frisbie, C. Daniel
T1  - Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors
JF  - Nature Communications
N2  - Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure–charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure–property relationships in organic semiconductors.
KW  - electronic and spintronic devices
KW  - electronic devices
KW  - scanning probe microscopy
Y1  - 2018
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-227957
VL  - 9
ER  -