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High magnetic field transport in II-VI heterostructures

Please always quote using this URN: urn:nbn:de:bvb:20-opus-37797
  • In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were carried out at temperatures in the range 0.4 - 4.2 K in magnetic fields up to 10.0 T. Further, we point out the necessity of using multicarrier models for data interpretation and show finally some Shubnikov-de-Haas results on sampies with high mobility carners.

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Metadaten
Author: R. N. Bicknell-Tassius, S. Scholl, Charles R. Becker, G. Landwehr
URN:urn:nbn:de:bvb:20-opus-37797
Document Type:Conference Proceeding
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Language:English
Year of Completion:1992
Source:In: High Magnetic Fields in Semiconductor Physics : International Conference on the Application of High Magnetic Fields in Semiconductor Physics <1988, Würzburg>, III: Quantum Hall Effect / ed. by G. Landwehr. - Berlin : Springer, 1992 (Springer Series in Solid State Sciences : 101) 386-393.
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Release Date:2009/09/22