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ZnO-based semiconductors studied by Raman spectroscopy: semimagnetic alloying, doping, and nanostructures

Ramanspektroskopische Untersuchung ZnO-basierte Halbleiter: Semimagnetische Legierung, Dotierung und Nanostrukturen

Please always quote using this URN: urn:nbn:de:bvb:20-opus-37045
  • ZnO-based semiconductors were studied by Raman spectroscopy and complementary methods (e.g. XRD, EPS) with focus on semimagnetic alloying with transition metal ions, doping (especially p-type doping with nitrogen as acceptor), and nanostructures (especially wet-chemically synthesized nanoparticles).
  • ZnO-basierte Halbleiter wurden mittels Ramanspektroskopie und komplementärer Methoden (z.B. XRD, EPS) untersucht mit den Schwerpunkten semimagnetische Legierung mit Übergangsmetallen, Dotierung (vor allem p-Dotierung mit Stickstoff als Akzeptor) und Nanostrukturen (vor allem nass-chemisch hergestellte Nanopartikel).

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Metadaten
Author: Marcel Schumm
URN:urn:nbn:de:bvb:20-opus-37045
Document Type:Doctoral Thesis
Granting Institution:Universität Würzburg, Fakultät für Physik und Astronomie
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Date of final exam:2009/07/01
Language:English
Year of Completion:2008
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
GND Keyword:Wide-gap-Halbleiter; Würzburg / Sonderforschungsbereich II-VI-Halbleiter; Verbindungshalbleiter; Zwei-Sechs-Halbleiter; Semimagnetischer Halbleiter; n-Halbleiter; Niederdimensionaler Halbleiter; p-Halbleiter; Kolloider Halbleiter; Magnetisch
Tag:DMS; Raman; Ramanspektroskopie; Zinkoxid; ZnO
DMS; Diluted Magnetic Semiconductors; Raman; Raman spectroscopy; Zinc oxide; ZnO; doping; secondary phases
PACS-Classification:60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 61.00.00 Structure of solids and liquids; crystallography (for surface, interface, and thin film structure, see section 68) / 61.72.-y Defects and impurities in crystals; microstructure (for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology) / 61.72.Cc Kinetics of defect formation and annealing
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 61.00.00 Structure of solids and liquids; crystallography (for surface, interface, and thin film structure, see section 68) / 61.72.-y Defects and impurities in crystals; microstructure (for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology) / 61.72.U- Doping and impurity implantation / 61.72.uj III-V and II-VI semiconductors
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 64.00.00 Equations of state, phase equilibria, and phase transitions (see also 82.60.-s Chemical thermodynamics) / 64.75.-g Phase equilibria (see also 82.60.Lf Thermodynamics of solutions; 47.51.+a Mixing in fluid dynamics; for properties of solutions of biomolecules, see 87.15.N- in biological physics) / 64.75.Qr Phase separation and segregation in semiconductors
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 78.00.00 Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter / 78.30.-j Infrared and Raman spectra (for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x respectively) / 78.30.Fs III-V and II-VI semiconductors
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 78.00.00 Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter / 78.66.-w Optical properties of specific thin films (for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m) / 78.66.Hf II-VI semiconductors
Release Date:2009/07/14
Advisor:Prof. Dr. Jean Geurts