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Resonant Raman scattering in a zero-gap semiconductor: Interference effects and deformation potentials at the E\(_1\) and E\(_1\) + \(\Delta_1\) gaps of HgTe

Please always quote using this URN: urn:nbn:de:bvb:20-opus-38062

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Metadaten
Author: M. Rösch, R. Atzmüller, G. Schaack, Charles R. Becker
URN:urn:nbn:de:bvb:20-opus-38062
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Language:English
Year of Completion:1994
Source:In: Physical review B (1994) 49, 19, 13460-13474.
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Release Date:2009/09/23