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Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Please always quote using this URN: urn:nbn:de:bvb:20-opus-143692
  • The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would beThe position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.show moreshow less

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Metadaten
Author: Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, Soo-Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong-Su Kim
URN:urn:nbn:de:bvb:20-opus-143692
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Language:English
Parent Title (English):Nanoscale Research Letters
Year of Completion:2015
Volume:10
Issue:114
Source:Nanoscale Research Letters (2015) 10:114. DOI: 10.1186/s11671-015-0826-2
DOI:https://doi.org/10.1186/s11671-015-0826-2
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 539 Moderne Physik
Tag:GaAs; droplet epitaxy; micro-photoluminescence; quantum dot; single photon
Release Date:2018/05/30
Licence (German):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International