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Ferromagnetic (Ga,Mn)As Layers and Nanostructures: Control of Magnetic Anisotropy by Strain Engineering

Ferromagnetische (Ga,Mn)As Schichten und Nanostrukturen: Kontrolle der magnetischen Anisotropie durch Manipulation der Kristallverspannung

Please always quote using this URN: urn:nbn:de:bvb:20-opus-34552
  • This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution x-ray diffraction methods. The influence of lattice strain on the magnetic anisotropyThis work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution x-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter.show moreshow less
  • Die vorliegende Arbeit untersucht den fundamentalen Zusammenhang zwischen Gitterverspannung und magnetischer Anisotropie in dem ferromagnetischen Halbleiter (Ga,Mn)As. Die ersten Kapitel bieten eine allgemeine Einleitung in das Materialsystem und eine detaillierte Beschreibung des Wachstumsprozesses mittels Molekularstrahlepitaxie. Eine Finite-Elemente Simulation wird entwickelt, um die Verteilung der Gitterverspannung in (Ga,Mn)As Nanostrukturen zu modellieren. Die daraus abgeleiteten Vorhersagen werden mittels hochauflösender RöntgenbeugungDie vorliegende Arbeit untersucht den fundamentalen Zusammenhang zwischen Gitterverspannung und magnetischer Anisotropie in dem ferromagnetischen Halbleiter (Ga,Mn)As. Die ersten Kapitel bieten eine allgemeine Einleitung in das Materialsystem und eine detaillierte Beschreibung des Wachstumsprozesses mittels Molekularstrahlepitaxie. Eine Finite-Elemente Simulation wird entwickelt, um die Verteilung der Gitterverspannung in (Ga,Mn)As Nanostrukturen zu modellieren. Die daraus abgeleiteten Vorhersagen werden mittels hochauflösender Röntgenbeugung bestätigt. Der Einfluss der Gitterverspannung auf die magnetische Anisotropie wird anhand eines magnetostatischen Modells erklärt. Das abschließende Kapitel gibt einen Ausblick auf eine mögliche praktische Anwendung der beschriebenen Phänomene.show moreshow less

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Metadaten
Author: Jan Wenisch
URN:urn:nbn:de:bvb:20-opus-34552
Document Type:Doctoral Thesis
Granting Institution:Universität Würzburg, Fakultät für Physik und Astronomie
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Date of final exam:2009/02/10
Language:English
Year of Completion:2008
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
GND Keyword:Magnetischer Halbleiter; Drei-Fünf-Halbleiter; Ferromagnetismus; Magnetoelektronik; Bandstrukturberechnung; Molekularstrahlepitaxie; Elastische Spannung; Computersimulation; Röntgenbeugung
Tag:GaMnAs
Ferromagnetic Semiconductors; Magnetic Anisotropy; Molecular Beam Epitaxy; Strain
PACS-Classification:60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 61.00.00 Structure of solids and liquids; crystallography (for surface, interface, and thin film structure, see section 68) / 61.05.-a Techniques for structure determination; Microscopy of surfaces, interfaces, and thin films, see 68.37.-d / 61.05.C- X-ray diffraction and scattering (for x-ray diffractometers, see 07.85.Jy; for x-ray studies of crystal defects, see 61.72.Dd, Ff) / 61.05.cp X-ray diffraction
60.00.00 CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES / 68.00.00 Surfaces and interfaces; thin films and nanosystems (structure and nonelectronic properties) (for surface and interface chemistry, see 82.65.+r, for surface magnetism, see 75.70.Rf) / 68.60.-p Physical properties of thin films, nonelectronic / 68.60.Bs Mechanical and acoustical properties
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 75.00.00 Magnetic properties and materials (for magnetic properties of quantum solids, see 67.80.dk; for magnetic properties related to treatment conditions, see 81.40.Rs; for magnetic properties of superconductors, see 74.25.Ha; for magnetic properties of rocks a / 75.30.-m Intrinsic properties of magnetically ordered materials (for critical point effects, see 75.40.-s) / 75.30.Gw Magnetic anisotropy
70.00.00 CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES / 75.00.00 Magnetic properties and materials (for magnetic properties of quantum solids, see 67.80.dk; for magnetic properties related to treatment conditions, see 81.40.Rs; for magnetic properties of superconductors, see 74.25.Ha; for magnetic properties of rocks a / 75.50.-y Studies of specific magnetic materials / 75.50.Pp Magnetic semiconductors
80.00.00 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY / 81.00.00 Materials science / 81.15.-z Methods of deposition of films and coatings; film growth and epitaxy (for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics) / 81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
Release Date:2009/03/10
Advisor:Prof. Karl Brunner