Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

Please always quote using this URN: urn:nbn:de:bvb:20-opus-136386
  • The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga\(_{0.665}\)In\(_{0.335}\)As\(_x\)Sb\(_{1-x}\)/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideallyThe effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga\(_{0.665}\)In\(_{0.335}\)As\(_x\)Sb\(_{1-x}\)/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend.show moreshow less

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Metadaten
Author: Marcin Motyka, Grzegorz Sęk, Krzysztof Ryczko, Mateusz Dyksik, Robert Weih, Gilles Patriarche, Jan Misiewicz, Martin Kamp, Sven Höfling
URN:urn:nbn:de:bvb:20-opus-136386
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Language:English
Parent Title (English):Nanoscale Research Letters
Year of Completion:2015
Volume:10
Issue:471
Source:Nanoscale Research Letters (2015) 10:471. DOI 10.1186/s11671-015-1183-x
DOI:https://doi.org/10.1186/s11671-015-1183-x
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 535 Licht, Infrarot- und Ultraviolettphänomene
6 Technik, Medizin, angewandte Wissenschaften / 62 Ingenieurwissenschaften / 621 Angewandte Physik
Tag:EDX spectra; FTIR spectroscopy; QW interface profile; interband cascade lasers; intermixing; type II GaIn(As)Sb/GaSb
Release Date:2016/08/24
EU-Project number / Contract (GA) number:318798
OpenAIRE:OpenAIRE
Licence (German):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung