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We present a theoretical study on exciton–exciton annihilation (EEA) in a molecular dimer. This process is monitored using a fifth-order coherent two-dimensional (2D) spectroscopy as was recently proposed by Dostál et al. [Nat. Commun. 9, 2466 (2018)]. Using an electronic three-level system for each monomer, we analyze the different paths which contribute to the 2D spectrum. The spectrum is determined by two entangled relaxation processes, namely, the EEA and the direct relaxation of higher lying excited states. It is shown that the change of the spectrum as a function of a pulse delay can be linked directly to the presence of the EEA process.
Doping plays a decisive role for the functionality of semiconductor-based (opto-)electronic
devices. Hence, the technological utilization of semiconductors necessitates control and a
fundamental understanding of the doping process. However, for low-dimensional systems like
carbon nanotubes, neither concentration nor distribution of charge carriers is currently well known.
The research presented in this thesis investigated the doping of semiconducting carbon nanotubes by spectroscopic methods. Samples of highly purified, intrinsic (6,5) single-wall carbon nanotubes were fabricated using polymer stabilization.
Chapter 4 showed that both electro- and redox chemical $p$-doping lead to identical bleaching,
blueshift, broadening and asymmetry of the S$_1$ exciton absorption band. The similar spectral changes induced by both doping schemes suggest that optical spectra can not be used to infer what process was used for doping. Perhaps more importantly, it also indicates that the distribution of charges and the character of the charge transfer states does not depend on the method by which doping was achieved.
The detailed analysis of the doping-induced spectral changes in chapter 5 suggests that surplus charges are distributed inhomogeneously. The hypothesis of carrier localization is consistent with the high sensitivity of the S$_1$ exciton photoluminescence to additional charge carriers and with the stretched-exponential decay of the exciton population following ultrafast excitation.
Both aspects are in good agreement with diffusion-limited contact quenching of excitons
at localized charges. Moreover, localized charges act – similar to structural defects – as
perturbations to the bandstructure as evidenced by a doping-induced increase of the D-band
antiresonance in the mid-infrared spectrum.
Quantum mechanical model calculations also suggest that counterions play a crucial role in
carrier localization. Counterion adsorption at the nanotube surface is thus believed to induce charge traps of more than 100 meV depth with a carrier localization length on the order of 3 - 4 nm. The doping-induced bleach of interband absorption is accompanied by an absorption increase in the IR region below 600 meV. The observed shift of the IR peak position indicates a continuous transition from localized to rather delocalized charge carriers. This transition is caused by the increase of the overlap of charge carrier wavefunctions at higher charge densities and was modeled by classical Monte-Carlo simulations of intraband absorption.
Chapter 6 discussed the spectroscopy of heavily (degenerately) doped nanotubes, which are
characterized by a Drude-response of free-carrier intraband absorption in the optical conductivity spectrum. In the NIR spectral region, the S$_1$ exciton and X$+^_1$ trion absorption is replaced by a nearly 1 eV broad and constant absorption signal, the so-called H-band. The linear and transient absorption spectra of heavily doped nanotubes suggest that the H-band can be attributed to free-carrier interband transitions.
Chapter 7 dealt with the quantification of charge carrier densities by linear absorption spectroscopy.
A particularly good measure of the carrier density is the S$_1$ exciton bleach. For a
bleach below about 50 %, the carrier density is proportional to the bleach. At higher doping
levels, deviations from the linear behavior were observed. For doping levels exceeding a
fully bleached S$_1$ band, the determination of the normalized oscillator strength f$\text{1st}$ over the
whole first subband region (trion, exciton, free e-h pairs) is recommended for quantification of carrier densities. Based on the nanotube density of states, the carrier density $n$ can be estimated using $n = 0.74\,\text{nm}^{−1} \cdot (1 − f_\text{1st})$.
In the last part of this thesis (chapter 8), the time-resolved spectroelectrochemistry was
extended to systems beyond photostable carbon nanotube films. The integration of a flowelectrolysis cell into the transient absorption spectrometer allows the investigation of in-situ electrochemically generated but photounstable molecules due to a continuous exchange of sample volume. First time-resolved experiments were successfully performed using the dye
methylene blue and its electrochemically reduced form leucomethylene blue.
This thesis describes the growth and characterization of both the all-oxide heterostructure
Fe3O4/ZnO and the spin-orbit coupling driven layered perovskite iridates.
As for Fe3O4/ZnO, the 100% spin-polarized Fe3O4 is a promising spin electrode candidate
for spintronic devices. However, the single crystalline ZnO substrates exhibit different polar surface termination which, together with substrate preparation method, can drastically affect the physical properties of Fe3O4/ZnO heterostructures. In this thesis two different methods of substrate preparation were investigated: a previously used in situ method involving sputtering and annealing treatments and a recent ex situ method containing only the annealing procedure. For the latter, the annealing treatment was performed in dry and humid O2 gas flow for the O- and Zn-terminated substrates, respectively, to produce atomically at surfaces as verified by atomic force microscopy(AFM). With these methods, four different ZnO substrates were fabricated and used further for Fe3O4 film growth. Fe3O4 films of 20 nm thickness were successfully grown by reactive molecular beam epitaxy. AFM measurements reveal a higher film surface roughness for the samples with in situ prepared substrates. Moreover, X-ray photoelectron spectroscopy (XPS) measurements indicate significant Zn substitution within the Fe3O4 film for these samples, whereas the samples with ex situ prepared substrates show stoichiometric Fe3O4 films. X-ray diffraction measurements confirm the observations from XPS, revealing additional peaks due to Zn substitution in Fe3O4 films grown on in situ prepared ZnO substrates. Conductivity, as well as magnetometry, measurements show the presence of Zn-doped ferrites in films grown on in situ prepared substrates. Such unintentionally intercalated Zn-doped ferrites dramatically change the electrical and magnetic properties of the films and, therefore, are not preferred in a high-quality heterostructure.
X-ray reflectivity (XRR) measurements show for the film grown on ex situ prepared Zn-terminated substrate a variation of film density close to the interface which is also confirmed by transmission electron microscopy (TEM). Using polarized neutron reflectometry, magnetic depth profiles of the films grown on ex situ prepared substrates clearly indicate Fe3O4 layers with reduced magnetization at the interfaces. This result is consistent with earlier observations made by resonant magnetic X-ray reflectometry (RMXR), but in contrast to the findings from XRR and TEM of this thesis. A detailed TEM study of all four samples shows that the sample with ex situ prepared O-terminated substrate has the sharpest interface, whereas those with ex situ prepared Zn-terminated as well as in situ prepared substrates indicate rougher interfaces. STEM-EELS composition profiles of the samples reveal the Zn substitution in the films with in situ prepared substrates and therefore confirm the presence of Zn-doped ferrites. Moreover, a change of the Fe oxidation state of the first Fe layer at the interface which was observed in previous studies done by RMXR, was not verified for the samples with in situ prepared substrates thus leaving the question of a possible presence of the magnetically dead layer open. Furthermore, density functional theory calculations were performed to determine the termination dependent layer sequences which are ...-Zn-O-(interface)-[Fe(octa)-O-Fe(tetra)-Fe(octa)-Fe(tetra)-O]-[...]-... and ...-O-Zn-(interface)-[O-Fe(octa)-O-Fe(tetra)-Fe(octa)-Fe(tetra)]-[...]-... for the samples with O- and Zn-terminated substrates, respectively. Spin density calculations show that in case of O-termination the topmost substrate layers imitate the spin polarization of film layers close to the interface. Here, the first O layer is affected much stronger than the first Zn layer. Due to the strong decrease of this effect toward deeper substrate layers, the substrate surface is supposed to be sensitive to the contiguous spin polarization of the film. Thus, the topmost O layer of the O-terminated substrate could play the most essential role for effective spin injection into ZnO.
The 5d transition metal oxides Ba2IrO4 (BIO) and Sr2IrO4 (SIO) are associated with the Ruddlesden-Popper iridate series with phase type "214" (RP{214), and due to the strong spin-orbit coupling belong to the class of Mott insulators. Moreover, they show many similarities of the isostructural high Tc-cuprate superconductors, e.g. crystal structure, magnetism and electronic band structure. Therefore, it is of great interest to activate a potential superconducting phase in (RP{214) iridates. However, only a small number of publications on PLD grown (RP{214) iridates in the literature exists. Furthermore, published data of soft X-ray angle resolved photoemission spectroscopy (SX-ARPES) experiments mainly originate from measurements which were performed on single crystals or MBE grown films of SIO and BIO. In this thesis La-doped SIO films (La0:2Sr1:8IrO4, further referred as LSIO) were used to pursue a potential superconducting phase.
A set of characterization methods was used to analyze the quality of the PLD grown BIO, SIO and LSIO films. AFM measurements demonstrate that thick PLD grown(RP{214) iridate films have rougher surfaces, indicating a transition from a 2D layer-bylayer growth (which is demonstrated by RHEED oscillations) to a 3D island-like growth mode. In addition, chemical depth profiling XPS measurements indicate an increase of the O and Ir relative concentrations in the topmost film layers. Constant energy k-space maps and energy distribution curves (EDCs) measured by SX-ARPES show for every grown film only weak energy band dispersions, which are in strong contrast to the results obtained on the MBE grown films and single crystals from the literature. In this thesis,
a subsequent TEM study reveals missing SrO layers within the grown films which occur mainly in the topmost layers, confirming the results and suggestions from XPS and SX-ARPES data: the PLD grown films have defects and, therefore, incoherently scatter photoelectrons. Nevertheless, the LSIO film shows small additional spectral weight between the highsymmetry M points close to the Fermi level which can be attributed to quasiparticle states which, in turn, indicates the formation of a Fermi-arc. However, neither conductivity measurements nor valence band analysis via XPS confirm an activation of a superconducting phase or presence of spectral weight of quasiparticle states at the Fermi level in this LSIO film.
It is possible that these discovered difficulties in growth are responsible for the low number of SX-ARPES publications on PLD grown (RP{214) iridate films. For further investigations of (RP{214) iridate films by SX-ARPES, their PLD growth recipes have to be improved to create high quality single crystalline films without imperfections.
We present a theoretical study on exciton–exciton annihilation (EEA) in a molecular dimer. This process is monitored using a fifth-order coherent two-dimensional (2D) spectroscopy as was recently proposed by Dostál et al. [Nat. Commun. 9, 2466 (2018)]. Using an electronic three-level system for each monomer, we analyze the different paths which contribute to the 2D spectrum. The spectrum is determined by two entangled relaxation processes, namely, the EEA and the direct relaxation of higher lying excited states. It is shown that the change of the spectrum as a function of a pulse delay can be linked directly to the presence of the EEA process.