@article{BeckerHeRegnetetal.1993,
  author    = {Becker, Charles R. and He, L. and Regnet, M. M. and Kraus, M.M. and Wu, Y. S. and Landwehr, G. and Zhang, X. F. and Zhang, H.},
  title     = {The growth and structure of short period (001) Hg\(_{1-x}\)Cd\(_x\)Te-HgTe superlattices},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37858},
  year      = {1993},
  abstract  = {Molecular beam epitaxially grown short period (001) Hg\(_{1_x}\)Cd\(_x\)Te-HgTe superlattices have been systematically investigated. Several narrow well widths were chosen, e.g., 30, 35 and 40 {\AA}, and the barrier widths were varied between 24 and 90 {\AA} for a particular well width. Both the well width and the total period were determined directly by means of x-ray diffraction. The well width was determined by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier widths we have been able to set an upper limit on the average Cd concentration of the barriers, \(\overline x_b\), by annealing several superlattices and then measuring the composition of the resulting alloy. \(\overline x_b\) was shown to decrease exponentially with decreasing barrier width. The structure of a very short period superlattice, i.e., 31.4 {\AA}, was also investigated by transmission electron microscopy, corroborating the x-ray diffraction results.},
  language  = {en}
}
@article{BeckerHeEinfeldtetal.1993,
  author    = {Becker, Charles R. and He, L. and Einfeldt, S. and Wu, Y. S. and L{\´e}rondel, G. and Heinke, H. and Oehling, S. and Bicknell-Tassius, R. N. and Landwehr, G.},
  title     = {Molecular beam epitaxial growth and characterization of (100) HgSe on GaAs},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-50947},
  year      = {1993},
  abstract  = {In this paper, we present results on the first MBE growth of HgSe. The influence of the GaAs substrate temperature as well as the Hg and Se fluxes on the growth and the electrical properties has been investigated. It has been found that the growth rate is very low at substrate temperatures above 120°C. At 120°C and at lower temperatures, the growth rate is appreciably higher. The sticking coefficient of Se seems to depend inversely on the Hg/Se flux ratio. Epitaxial growth could be maintained at 70°C with Hg/Se flux ratios between lOO and ISO, and at 160°C between 280 and 450. The electron mobilities of these HgSe epilayers at room temperature decrease from a maximum value of 8.2 x 10^3 cm2 /V' s with increasing electron concentration. The concentration was found to be between 6xlO^17 and 1.6x10^19 cm- 3 at room temperature. Rocking curves from X-ray diffraction measurements of the better epilayers have a full width at half maximum of 5S0 arc sec.},
  subject      = {Physik},
  language  = {en}
}