@article{MotykaDyksikRyczkoetal.2016,
  author    = {Motyka, M. and Dyksik, M. and Ryczko, K. and Weih, R. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiewicz, J.},
  title     = {Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing},
  series = {Applied Physics Letters},
  volume    = {108},
  journal   = {Applied Physics Letters},
  number    = {10},
  doi       = {10.1063/1.4943193},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-189795},
  year      = {2016},
  abstract  = {Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.},
  language  = {en}
}
@article{DyksikMotykaKurkaetal.2016,
  author    = {Dyksik, M. and Motyka, M. and Kurka, M. and Ryczo, K. and Dallner, M. and H{\"o}fling, S. and Kamp, M. and Sęk, G. and Misiwicz, J.},
  title     = {Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates},
  series = {Optical and Quantum Electronics},
  volume    = {48},
  journal   = {Optical and Quantum Electronics},
  number    = {401},
  doi       = {10.1007/s11082-016-0667-y},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-204672},
  year      = {2016},
  abstract  = {Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.},
  language  = {en}
}