@article{BistiRogalevKarolaketal.2017,
  author    = {Bisti, F. and Rogalev, V. A. and Karolak, M. and Paul, S. and Gupta, A. and Schmitt, T. and G{\"u}ntherodt, G. and Eyert, V. and Sangiovanni, G. and Profeta, G. and Strocov, V. N.},
  title     = {Weakly-correlated nature of ferromagnetism in nonsymmorphic CrO\(_2\) revealed by bulk-sensitive soft-X-ray ARPES},
  series = {Physical Review X},
  volume    = {7},
  journal   = {Physical Review X},
  number    = {4},
  doi       = {10.1103/PhysRevX.7.041067},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-172251},
  year      = {2017},
  abstract  = {Chromium dioxide CrO\(_2\) belongs to a class of materials called ferromagnetic half-metals, whose peculiar aspect is that they act as a metal in one spin orientation and as a semiconductor or insulator in the opposite one. Despite numerous experimental and theoretical studies motivated by technologically important applications of this material in spintronics, its fundamental properties such as momentumresolved electron dispersions and the Fermi surface have so far remained experimentally inaccessible because of metastability of its surface, which instantly reduces to amorphous Cr\(_2\)O\(_3\). In this work, we demonstrate that direct access to the native electronic structure of CrO\(_2\) can be achieved with soft-x-ray angle-resolved photoemission spectroscopy whose large probing depth penetrates through the Cr\(_2\)O\(_3\) layer. For the first time, the electronic dispersions and Fermi surface of CrO\(_2\) are measured, which are fundamental prerequisites to solve the long debate on the nature of electronic correlations in this material. Since density functional theory augmented by a relatively weak local Coulomb repulsion gives an exhaustive description of our spectroscopic data, we rule out strong-coupling theories of CrO\(_2\). Crucial for the correct interpretation of our experimental data in terms of the valence-band dispersions is the understanding of a nontrivial spectral response of CrO\(_2\) caused by interference effects in the photoemission process originating from the nonsymmorphic space group of the rutile crystal structure of CrO\(_2\).},
  language  = {en}
}
@article{DeaconWiedenmannBocquillonetal.2017,
  author    = {Deacon, R. S. and Wiedenmann, J. and Bocquillon, E. and Dom{\´i}nguez, F. and Klapwijk, T. M. and Leubner, P. and Br{\"u}ne, C. and Hankiewicz, E. M. and Tarucha, S. and Ishibashi, K. and Buhmann, H. and Molenkamp, L. W.},
  title     = {Josephson Radiation from Gapless Andreev Bound States in HgTe-Based Topological Junctions},
  series = {Physical Review X},
  volume    = {7},
  journal   = {Physical Review X},
  number    = {021011},
  doi       = {10.1103/PhysRevX.7.021011},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-170969},
  year      = {2017},
  abstract  = {Frequency analysis of the rf emission of oscillating Josephson supercurrent is a powerful passive way of probing properties of topological Josephson junctions. In particular, measurements of the Josephson emission enable the detection of topological gapless Andreev bound states that give rise to emission at half the Josephson frequency f\(_{J}\) rather than conventional emission at f\(_{J}\). Here, we report direct measurement of rf emission spectra on Josephson junctions made of HgTe-based gate-tunable topological weak links. The emission spectra exhibit a clear signal at half the Josephson frequency f\(_{J}\)/2. The linewidths of emission lines indicate a coherence time of 0.3-4 ns for the f\(_{J}\)/2 line, much shorter than for the f\(_{J}\) line (3-4 ns). These observations strongly point towards the presence of topological gapless Andreev bound states and pave the way for a future HgTe-based platform for topological quantum computation.},
  language  = {en}
}
@article{KimZhangWangetal.2016,
  author    = {Kim, Seonghoon and Zhang, Bo and Wang, Zhaorong and Fischer, Julian and Brodbeck, Sebastian and Kamp, Martin and Schneider, Christian and H{\"o}fling, Sven and Deng, Hui},
  title     = {Coherent Polariton Laser},
  series = {Physical Review X},
  volume    = {6},
  journal   = {Physical Review X},
  number    = {011026},
  doi       = {10.1103/PhysRevX.6.011026},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-166597},
  year      = {2016},
  abstract  = {The semiconductor polariton laser promises a new source of coherent light, which, compared to conventional semiconductor photon lasers, has input-energy threshold orders of magnitude lower. However, intensity stability, a defining feature of a coherent state, has remained poor. Intensity noise many times the shot noise of a coherent state has persisted, attributed to multiple mechanisms that are difficult to separate in conventional polariton systems. The large intensity noise, in turn, limits the phase coherence. Thus, the capability of the polariton laser as a source of coherence light is limited. Here, we demonstrate a polariton laser with shot-noise-limited intensity stability, as expected from a fully coherent state. This stability is achieved by using an optical cavity with high mode selectivity to enforce single-mode lasing, suppress condensate depletion, and establish gain saturation. Moreover, the absence of spurious intensity fluctuations enables the measurement of a transition from exponential to Gaussian decay of the phase coherence of the polariton laser. It suggests large self-interaction energies in the polariton condensate, exceeding the laser bandwidth. Such strong interactions are unique to matter-wave lasers and important for nonlinear polariton devices. The results will guide future development of polariton lasers and nonlinear polariton devices.},
  language  = {en}
}
@article{SiminSoltamovPoshakinskiyetal.2016,
  author    = {Simin, D. and Soltamov, V. A. and Poshakinskiy, A. V. and Anisimov, A. N. and Babunts, R. A. and Tolmachev, D. O. and Mokhov, E. N. and Trupke, M. and Tarasenko, S. A. and Sperlich, A. and Baranov, P. G. and Dyakonov, V. and Astakhov, G. V.},
  title     = {All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide},
  series = {Physical Review X},
  volume    = {6},
  journal   = {Physical Review X},
  doi       = {10.1103/PhysRevX.6.031014},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-147682},
  pages     = {031014},
  year      = {2016},
  abstract  = {We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-\(^{28}\)SiC) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100  nT/√Hz within a volume of 3×10\(^{-7}\)mm\(^3\) at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3  mm\(^3\), the projection noise limit is below 100  fT/√Hz.},
  language  = {en}
}
@article{BrueneThienelStuiberetal.2014,
  author    = {Br{\"u}ne, Christoph and Thienel, Cornelius and Stuiber, Michael and B{\"o}ttcher, Jan and Buhmann, Hartmut and Novik, Elena G. and Liu, Chao-Xing and Hankiewicz, Ewelina M. and Molenkamp, Laurens W.},
  title     = {Dirac-Screening Stabilized Surface-State Transport in a Topological Insulator},
  series = {Physical Review X},
  volume    = {4},
  journal   = {Physical Review X},
  number    = {4},
  issn      = {2160-3308},
  doi       = {10.1103/PhysRevX.4.041045},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-118091},
  pages     = {041045},
  year      = {2014},
  abstract  = {We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensional topological insulator and exclusively shows surface-state transport. Remarkably, the Landau-level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range (3×1011  cm-2<n<2×1012  cm-2). These observations imply that even at large carrier densities, the transport is surface-state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows us to identify the contributions from the individual surfaces. A k⋅p model can describe the experiments but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.},
  language  = {en}
}